Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors

Applied Surface Science

Volumn 112, Issue , 1997, Pages 102-109

  Mukai, Kohki ^a   Ohtsuka, Nobuyuki ^a   Shoji, Hajime ^a   Sugawara, Mitsuru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

ALE; GaAs; InGaAs; Laser; Phonon bottleneck; Quantum dots

Indexed keywords

ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; OPTICAL DEVICES; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ATOMIC LAYER EPITAXY; CARRIER RELAXATION; CURRENT INJECTION; LASING; MICROCRYSTALS; PHONON BOTTLENECK EFFECT; PRECURSORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031546824     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00993-2     Document Type: Article

References (24)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40 (1982) 939.
2. D.S. Chemla and D.A.B. Miller, Opt. Lett. 11 (1986) 522.
3. L. Brus, IEEE J. Quantum Electron 22 (1986) 1909.
4. J.N. Randall, M.A. Reed and G.A. Frazier, J. Vac. Sci. and Technol. B 7 (1989) 1398.
5. K. Kash, A. Scherer, J.M. Worlock, H.G. Craighead and M.C. Tamargo, Appl. Phys. Lett. 49 (1986) 1043.
6. T. Fukui, S. Ando, Y. Tokura and T. Toriyama, Appl. Phys. Lett. 58 (1991) 2018.
7. D.J. Eablesham and M. Cerullo, Phys. Rev. Lett. 64 (1990) 1943.
8. D. Leonard, M. Kishnamurthy, C.M. Reaves, S.P. Denbaars and P.M. Petroff, Appl. Phys. Lett. 63 (1993) 3203.
9. K. Mukai, N. Ohtsuka, M. Sugawara and S. Yamazaki, Jpn. J. Appl. Phys. 33 (1994) L1710.
10. N. Ohtsuka, and K. Mukai, Proc. Int. Conf. InP and Related Materials, Hokkaido, 1995.
11. K. Mukai, N. Ohtsuka and M. Sugawara, Jpn. J. Appl. Phys. 35 (1996) L262.
12. K. Mukai, H. Shoji, N. Ohtsuka and M. Sugawara, Appl. Phys. Lett. 68 (1996) 3013.
13. K. Mukai, H. Shoji, N. Ohtsuka and M. Sugawara, in: PRB Rapid Communication, 8/15/96 issue.
14. H. Shoji, K. Mukai, N. Ohtsuka, M. Sugawara, T. Uchida and H. Ishikawa, IEEE Photo. Tech. Lett. 7 (1995) 1385.
15. N. Ohtsuka and O. Ueda, Proc. Symp. Materials Research Society, Pittsburgh, No. 334 (1994) p. 225.
16. G.S. Solomon, J.A. Trezza and J.S. Harris Jr., Appl. Phys. Lett. 66 (1995) 991.
17. Y. Sakuma, M. Ozeki and K. Nakajima, J. Cryst. Growth 130 (1993) 147.
18. N. Grandjean and J. Massies, J. Cryst. Growth 134 (1993) 51.
19. J. Osaka, N. Inoue, Y. Mada, K. Yamada and K. Wada, J. Cryst. Growth 99 (1990) 120.
20. P. Boguslawski and A. Baldereschi, Phys. Rev. B 39 (1989) 8055.
21. M. Sugawara, Phys. Rev. B 51 (1995) 10743.
22. R.P. Mirin, J.P. Ibbetson, K. Nishi, A.C. Gossard and J.E. Bowers, Appl. Phys. Lett. 67 (1995) 3795.
23. U. Bockelmann and G. Bastard, Phys. Rev. B 42 (1990) 8947.
24. H. Benisty, C.M. Sotomayor-Torres and C. Weisbuch, Phys. Rev. B 44 (1991) 10945.