Growth mechanism of InAs quantum dots on GaAs by metal-organic chemical-vapor deposition

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Chung, Theodore ^a,b   Walter, Gabriel ^a   Holonyak, Nick ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; GROWTH PARAMETERS; ISLAND DENSITY; PHYSICAL MODELS;

ATOMIC FORCE MICROSCOPY; BOUNDARY LAYERS; CHEMICAL BONDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 20444479786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856218     Document Type: Article

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