Fabrication of AlInGaN-based blue-violet laser diode with low input power

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2649-2652

  Kwak, Joon Seop ^a   Jang, T ^a   Choi, K K ^a   Sung, Y J ^a   Kim, Y H ^a   Chae, S ^a   Lee, S N ^a   Ha, K H ^a   Nam, O H ^a   Park, Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HEAT LOSSES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE; DEPOSITION; ELECTRODES; ETCHING; MAGNESIUM PRINTING PLATES; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; WAVEGUIDES;

DISLOCATION DENSITY; LOW INPUT POWER; THERMAL DISSIPATION; THRESHOLD CURRENT DENSITY; BLUE-VIOLET LASER DIODES (BV-LD); CHEMICALLY ASSISTED ION BEAM ETCHING (CAIBE); CONTACT LAYERS;

SEMICONDUCTOR LASERS;

EID: 6344252725     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405001     Document Type: Conference Paper

References (5)

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