Effects of high potential barrier on InAs quantum dots and wetting layer

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5055-5059

  Kim, Jin Soo ^a   Yu, Phil Won ^a   Leem, Jae Young ^b   Jeon, Minhyon ^b   Noh, Sam Kyu ^c   Lee, Joo In ^c   Kim, Gu Hyun ^c   Kang, Se Kyung ^c   Kim, Jong Su ^d   Kim, Song Gang ^e  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Inje University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Yeungnam University   (South Korea)

^e Joongbu University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE-SHIFTED; DOT SIZE; GAAS; HIGH POTENTIAL; INAS; INAS QUANTUM DOTS; LOWER ENERGIES; PEAK POSITION; PHOTOREFLECTANCE; TEM IMAGES; TEMPERATURE DEPENDENT; THERMAL ACTIVATION ENERGIES; TRANSMISSION ELECTRON MICROSCOPY TEM; WETTING LAYER;

ACTIVATION ENERGY; GALLIUM ARSENIDE; NUCLEAR PHYSICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

INDIUM ARSENIDE;

EID: 0037091843     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1464230     Document Type: Article

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