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Volumn 91, Issue 8, 2002, Pages 5195-5199

Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped Al xGa 1-xAs/GaAs heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

GAAS BARRIERS; HEAVY-HOLE BANDS; INAS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; INTER-BAND TRANSITION; LOWER ENERGIES; MICRO-STRUCTURAL; MODULATION-DOPED; PHOTOLUMINESCENCE MEASUREMENTS; PL INTENSITY; PL SPECTRA; QD ARRAYS; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SELF-ASSEMBLED ARRAYS; SUBBANDS; TEM IMAGES; TEMPERATURE DEPENDENT; THERMAL ACTIVATION ENERGIES; TRANSMISSION ELECTRON MICROSCOPY TEM;

EID: 0037091710     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459752     Document Type: Article
Times cited : (16)

References (18)
  • 14
    • 0001396627 scopus 로고    scopus 로고
    • apl APPLAB 0003-6951
    • A. Barabasi, Appl. Phys. Lett. 70, 2565 (1997). apl APPLAB 0003-6951
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2565
    • Barabasi, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.