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Volumn 91, Issue 8, 2002, Pages 5195-5199
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Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped Al xGa 1-xAs/GaAs heterostructures
a a b b b b c |
Author keywords
[No Author keywords available]
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Indexed keywords
GAAS BARRIERS;
HEAVY-HOLE BANDS;
INAS;
INAS/GAAS;
INAS/GAAS QUANTUM DOTS;
INTER-BAND TRANSITION;
LOWER ENERGIES;
MICRO-STRUCTURAL;
MODULATION-DOPED;
PHOTOLUMINESCENCE MEASUREMENTS;
PL INTENSITY;
PL SPECTRA;
QD ARRAYS;
SELECTED AREA ELECTRON DIFFRACTION PATTERN;
SELF-ASSEMBLED ARRAYS;
SUBBANDS;
TEM IMAGES;
TEMPERATURE DEPENDENT;
THERMAL ACTIVATION ENERGIES;
TRANSMISSION ELECTRON MICROSCOPY TEM;
ACTIVATION ENERGY;
ELECTRON ABSORPTION;
ELECTRON DIFFRACTION;
GALLIUM;
GALLIUM ARSENIDE;
HETEROJUNCTIONS;
INDIUM ARSENIDE;
OPTICAL PROPERTIES;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
TRANSMISSION ELECTRON MICROSCOPY;
ALUMINUM;
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EID: 0037091710
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1459752 Document Type: Article |
Times cited : (16)
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References (18)
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