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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4375-4377

Effects of doping profile on characteristics of InAs quantum dots

(8) Park, Young Min a Park, Young Ju a,d Kim, Kwang Moo a Shin, Jae Cheol b Kim, Eun Kyu c Son, Maeng Ho d Hwang, Sung Woo c Yoo, Keon Ho b

a Korea Institute of Science and Technology (South Korea)

b University of Seoul (South Korea)

c Kyung Hee University (South Korea)

d Hanyang University (South Korea)

Author keywords

C V measurement; Carrier accumulation; Quantum dots; Si doping

Indexed keywords

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CARRIER ACCUMLATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036614006 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.4375 Document Type: Article

Times cited : (10)

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