Comparison of above bandgap laser and MeV ion induced single event transients in high-speed Si photonic devices

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3312-3320

  Laird, Jamie S ^a   Hirao, Toshio ^b   Onoda, Shinobu ^b   Itoh, Hisayoshi ^b   Johnston, Allan ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ENERGY GAP; HEAVY IONS; LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS;

BANDGAP; PLASMA DYNAMICS; SINGLE EVENT TRANSIENTS (SET); TRANSIENT CURRENTS;

OPTICAL DEVICES;

EID: 33846335488     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886007     Document Type: Conference Paper

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