Heavy ion and pulsed laser SET measurements in ultrahigh speed MSM GaAs photodetectors

IEEE Transactions on Nuclear Science

Volumn 52, Issue 5 II, 2005, Pages 1504-1512

  Laird, Jamie S ^a   Hirao, Toshio ^a   Onoda, Shinobu ^a   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; COMPUTER SIMULATION; LASER PULSES; SEMICONDUCTING GALLIUM ARSENIDE;

ION MICROBEAMS; LASER PROBING; SIGNAL GENERATION; SINGLE EVENT TRANSIENT (SET);

PHOTODETECTORS;

EID: 29144507675     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.855814     Document Type: Conference Paper

References (32)

1. J. Singh, Optoelectronics: An Introduction to Materials and Devices. New York: McGraw Hill, 1996.
2. C. J. Marshall, P. W. Marshall, C. J. Dale, M. A. Carts, R. A. Reed, and K. A. Label, "Proton-induced transient effects in a Metal-Semiconductor-Metal (MSM) photodetector for optical-based data transfer," IEEE Trans. Nucl. Sci., vol. 45, no. 5, pp. 2842-2848, Oct. 1998.
3. C. Klein, "Bandgap dependence and related features of radiation ionization energies in semiconductors," J. Appl. Phys., vol. 39, p. 2029, 1968.
4. L. D. Edmonds, "Charge collection from ion tracks in simple epi diodes," IEEE Trans. Nucl. Sci., vol. 44, no. 3, p. 1448, Jun. 1997.
5. P. A. Tove and W. Seibt, "Plasma effects in semiconductor detectors," Nucl. Instrum. Meth. Phys. Res., vol. 51, pp. 261-269, 1967.
6. J. S. Laird, T. Hirao, S. Onoda, and T. Kamiya, "The role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors," Nucl. Instrum. Meth. Phys. Res. B. vol. 219-220, pp. 1015-1021, 2004.
7. S. Donato, Photodetectors: Devices. Circuits and Applications. Upper Saddle River, NJ: Prentice-Hall, 2000.
8. I. Nashiyama, T. Hirao, T. Kamiya, H. Yutoh, T. Nishijima, and H. Sekiguchi, "Single event current transients induced by high energy ion microbeams," IEEE Trans. Nucl. Sci., vol. 40, no. 3, p. 935, Jun., 1993.
9. S. L. Wright, "Energy band alignment in GaAs (AlGa)As heterostructures: the dependence on alloy compositions," J. Appl. Phys., vol. 59, pp. 200-209, 1986.
10. J. S. Laird, T. Hirao, H. Mori, S. Onoda, T. Kamiya, and H. Itoh, "Development of a new data collection system and chamber for microbeam and laser investigations of single event phenomena," Nucl. Instrum. Meth. Phys. Res. B, vol. 181, pp. 87-94, 2001.
11. J. S. Laird, T. Hirao, S. Onoda, and H. Itoh, "A novel method for optimizing the focus of an ultrafast photon source using the transient photocurrent of a high-speed device," Rev. Sci. Instrum., to be published.
12. J. J. Kuta, H. M. v. Driel, D. Landheer, and Y. Feng, "Polarization dependence of the temporal response of metal-semiconductor-metal photodetectors," Appl. Phys. Lett., vol. 65, pp. 3146-3148, 1994.
13. J. F. Ziegler, "Stopping Ranges in Matter Monte Carlo Software," IBM Research Division, 2003.
14. E. J. Kobetich and R. Katz, "Energy deposition by electron beams and d rays," Phys. Rev., vol. 170, p. 391, 1968.
15. A. Akkerman and J. Barak, "Ion track structure and its effect in small size volumes of silicon," IEEE Trans. Nucl. Sci., vol. 49, no. 6, p. 3022, Dec. 2002.
16. J. S. Laird, T. Hirao, S. Onoda, H. Mori, and H. Itoh, "Temperature dependence of heavy ion-induced current transients in Si epilayer devices, " IEEE Trans. Nucl. Sci., vol. 49, no. 3, pp. 1389-1395, Jun. 2002.
17. D. B. W. D. F. Kyser, J. Appl. Phys., vol. 36, p. 1387, 1965.
18. H. Schone, D. S. Walsh, F. W. Sexton, B. L. Doyle, P. E. Dodd, J. F. Aurand, and N. Wing, "Time-Resolved Ion Beam Induced Charge Collection (TRIBICC) in micro-electronics," Nucl. Instrum. Meth. Phys. Res. B, vol. 158, pp. 424-431, 1999.
19. T. Hirao, I. Nashiyama, T. Kamiya, and T. Nishijima, "Effects of microbeam induced damage on single-event current measurements," Nucl. Instrum. Meth. Phys. Res. B, vol. 104, pp. 508-514, 1995.
20. M. B. H. Breese, J. S. Laird, G. R. Moloney, A. Saint, and D. N. Jamieson, "High signal to noise level ion beam induced charge images, " Appl. Phys. Lett., vol. 64, pp. 1962-1964, 1994.
21. L. D. Edmonds, "Electric currents through ion tracks in silicon devices," IEEE Trans. Nucl. Sci., vol. 45, no. 6, p. 3153, Dec. 1998.
22. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
23. J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weatherford, A. B. Campbell, and H. Eisen, "Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies," IEEE Trans. Nucl. Sci., vol. 41, no. 5, pp. 2574-2584, Oct. 1994.
24. J. G. Rollins, T. K. Tsubota, W. A. Kolasinski, N. F. Haddad, L. Rockett, M. Cerrila, and W. B. Hennley, "Cost-effective numerical simulation of SEU," IEEE Trans. Nucl. Sci., vol. 35, no. 3, pp. 1608-1612, Jun. 1988.
25. P. E. Dodd, "Device simulation of charge collection and single-event upset," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 561-575, Apr. 1996.
26. R. M. Gilbert, G. K. Ovrebo, and J. Schifano, "Plasma screening of funnel fields," IEEE Trans. Nucl. Sci., vol. NS-32, no. 6, p. 4098, Dec. 1985.
27. G. M. Dunn, A. B. Walker, A. J. Vickers, and V. R. Wicks, "Transient response of photodetectors," J. Appl. Phys., vol. 79, pp. 7329-7338, 1996.
28. V. Ferlet-Cavrois, P. Paillet, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, J. Baggio, A. Torres, and O. Flament, "Charge collection by capacitive influence through isolation oxides," IEEE Trans. Nucl. Sci., vol. 50, no. 5, pp. 2208-2218, Oct. 2003.
29. J. S. Laird, T. Hirao, S. Onoda, and H. Itoh, "High-injection carrier dynamics generated by focused MeV heavy ions and its influence on the impulse response of high-speed photodetectors," J. Appl. Phys., 2005, to be published.
30. M. Rosling, H. Bleichner, P. Jonsson, and E. Nordlander, "The ambipolar diffusion coefficient in silicon: dependence on excess-carrier concentration and temperature," J. Appl. Phys., vol. 76, pp. 2855-2859, 1994.
31. J. P. McKelvey, Solid State and Semiconductor Physics. Melbourne, FL: Krieger, 1986.
32. L. D. Edmonds, "Theoretical prediction of the impact of Auger recombination on charge collection from an ion track," IEEE Trans. Nucl. Sci., vol. 38, no. 3, pp. 999-1004, Jun. 1991.