A comparison of heavy ion and picosecond laser microbeams for investigating single event transients in InGaAs on InP photodetectors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 210, Issue , 2003, Pages 243-249

  Laird, Jamie Stuart ^a   Hirao, Toshio ^a   Onoda, Shinobu ^b   Mori, Hidenobu ^b   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Focused pulsed laser; InGaAs p i n photodiode; Single event transient; Single event upset; Transient ion beam induced current; Transient laser beam induced current

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; HEAVY IONS; ION BEAMS; LASER BEAMS; PHOTODETECTORS; SEMICONDUCTING INDIUM PHOSPHIDE;

SINGLE EVENT TRANSIENTS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0042513873     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01018-8     Document Type: Conference Paper

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