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Materials Transactions

Volumn 47, Issue 11, 2006, Pages 2696-2700

Influence of interface structure on Schottky barrier heights of α-Al2O3(0001)/Ni(111) interfaces: A first-principles study

(3) Shi, Siqi a Tanaka, Shingo a Kohyama, Masanori a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

First principles pseudopatential method; Metal oxide interfaces; Schottky barrier

Indexed keywords

ALUMINUM; CHARGE TRANSFER; INTERFACES (MATERIALS); STOICHIOMETRY;

FIRST-PRINCIPLES PSEUDOPATENTIAL METHOD; INTERFACE STOICHIOMETRY; METAL-OXIDE INTERFACES;

SCHOTTKY BARRIER DIODES;

EID: 33846331678 PISSN: 13459678 EISSN: None Source Type: Journal
DOI: 10.2320/matertrans.47.2696 Document Type: Article

Times cited : (17)

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