Atomic and electronic structures of Cu/α-Al2O3 interfaces prepared by pulsed-laser deposition

Science and Technology of Advanced Materials

Volumn 4, Issue 6, 2003, Pages 575-584

  Sasaki, Takeo ^a   Matsunaga, Katsuyuki ^a   Ohta, Hiromichi ^b   Hosono, Hideo ^c   Yamamoto, Takahisa ^a   Ikuhara, Yuichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Coincidence of reciprocal lattice points method; Cu Al2O3; Electron energy loss spectroscopy; High resolution transmission electron microscopy; Metal ceramic interface; Pulsed laser deposition

Indexed keywords

CATALYSIS; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; DEGRADATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; ELECTRONICS PACKAGING; EPITAXIAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MATERIALS SCIENCE; PULSED LASER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

COINCIDENCE OF RECIPROCAL LATTICE POINTS METHOD; CU/AL2O3; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); METAL-CERAMIC INTERFACES;

COPPER ALLOYS;

EID: 1642359190     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2003.12.003     Document Type: Article

References (22)

1. Hu C.-K., Small M.B., Rodbell K.P., Stanis C., Blauner P., Ho P.S. Electromigration failure due to interfacial diffusion in fine Al alloy lines. Appl. Phys. Lett. 62:1993;1023-1025.
2. 3 interface. Appl. Phys. Lett. 68:1996;1625-1627.
3. Solak H.H., Lorusso G.F., Singh-Gasson S., Cerrina F. An X-ray spectromicroscopic study of electromigration in patterned Al(Cu) lines. Appl. Phys. Lett. 74:1999;22-24.
4. Arnaud L., Gonella R., Tartavel G., Torrès J., Gounelle C., Gobil Y., Morand Y. Electromigration failure modes in damascene copper interconnects. Microelectron. Reliab. 38:1998;1029-1034.
5. Proost J., Hirato T., Furuhara T., Maex K., Celis J.-P. Microtexture and electromigration-induced drift in electroplated damascene Cu. J. Appl. Phys. 87:2000;2792-2802.
6. Arnaud L., Berger T., Reimbold G. Evidence of grain-boundary versus interface diffusion in electromigration experiments in copper damascene interconnects. J. Appl. Phys. 93:2003;192-204.
7. 3 interface. Phil. Mag. A. 63:1991;259-277.
8. Dehm G., Rühle M., Ding G., Raj R. Growth and structure of copper thin films deposited on (0001) sapphire by molecular beam epitaxy. Phil. Mag. B. 71:1995;1111-1124.
9. 3 interfaces grown by molecular beam epitaxy. Phil. Mag. A. 78:1998;439-465.
10. 3 interface. Phys. Status Solidi (b). 222:2000;199-211.
11. 3 substrates. J. Mater. Sci. Technol. 18:2002;117-120.
12. Ikuhara Y., Pirouz P. Orientation relationship in large mismatched bicrystals and coincidence of reciprocal lattice points (CRLP). Mater. Sci. Forum. 207-209:1996;121-124.
13. Kilaas R. Image simulation for high resolution microscopy. Bailey G.W. Proceeding of the 49th EMSA Meeting. 1991;528-529 San Francisco Press, San Francisco.
14. 3(0001) interface. J. Soc. Mater. Sci. Jpn. 52:2003;555-559.
15. Ikuhara Y., Pirouz P. High resolution transmission electron microscopy studies of metal/ceramics interfaces. Microsc. Res. Techn. 40:1998;206-241.
16. 3. Physica B. 150:1988;44-46.
17. Bortz M.L., French R.H. Optical reflectivity measurements using a laser plasma light source. Appl. Phys. Lett. 55:1989;1955-1957.
18. 3{0001}-(1×1) surface. Surf. Sci. 388:1997;121-131.
19. 3(0001): theory and experiment. Surf. Sci. 446:2000;76-88.
20. 3(0001) surface. J. Phys. Chem. B. 106:2002;11495-11500.
21. Benedek R., Seidman D.N., Minkoff M., Yang L.H., Alavi A. Atomic and electronic structure and interatomic potentials at a polar ceramic/metal interface: {222}MgO/Cu. Phys. Rev. B. 60:1999;16094-16102.
22. Tasker P.W., Stoneham A.M. The stabilization of oxide and oxide-metal interfaces by defects and impurities. J. Chim. Phys. 84:1987;149-155.