Ab initio study of 3C-SiC/M (M = Ti or Al) nano-hetero interfaces

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 471-477

  Tanaka, Shingo ^a   Kohyama, Masanori ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Ab initio calculation; Nano hetero interface; Pseudopotential; Schottky barrier height; SiC

Indexed keywords

ALUMINUM; ATOMS; CHEMICAL BONDS; NANOSTRUCTURED MATERIALS; TITANIUM;

NANO-HETERO INTERFACES;

INTERFACES (MATERIALS);

EID: 0038345934     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00400-8     Document Type: Conference Paper

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