Properties and density of states of the interface between silicon and carbon films rich in sp3 bonds

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5017-5020

  Logothetidis, S ^a   Evangelou, E ^b   Konofaos, N ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF IOANNINA   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INTERFACE; CONDUCTANCE TECHNIQUES; DENSITY OF INTERFACE STATE; DENSITY OF STATE; ELECTRONIC APPLICATION; GROWTH PROCESS; INTERFACE STATE; LOW SUBSTRATE TEMPERATURE; ORDER OF MAGNITUDE; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SI(1 0 0);

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; MAGNETRON SPUTTERING;

CARBON FILMS;

EID: 0000272691     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366402     Document Type: Article

References (16)

1. J. C. Angus, P. Koidl, and S. Domitz, in Plasma Deposited Thin Films, edited by J. Mort and F. Jancen (CRC, Boca Raton, FL, 1986), p. 89.
2. J. Robertson, Prog. Solid State Chem. 21, 199 (1991).
3. P. Wood, T. Wydeven, and O. Tsuji, Thin Solid Films 258, 151 (1995).
4. G. A. Amaratunga, D. E. Segal, and D. R. McKenzie, Appl. Phys. Lett. 59, 69 (1991).
5. K. K. Chan, S. R. P. Silva, and G. A. J. Amaratunga, Thin Solid Films 212, 232 (1992).
6. N. Konofaos and C. B. Thomas, Appl. Phys. Lett. 61, 2805 (1992).
7. J. Szmidt, R. B. Beck, S. Mitura, and A. Sokolowska, Diamond Relat. Mater. 3, 853 (1994).
8. N. Konofaos, Ph. D. thesis, University of Bradford, 1993.
9. E. H. Nicollian and J. R. Brews, Metal Oxide Semiconductor (MOS) Physics and Technology (Wiley, New York, 1982).
10. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
12. A. A. Khan, J. A. Woollam, and Y. Chung, J. Appl. Phys. 55, 4299 (1984).
13. S. Logothetidis, Appl. Phys. Lett. 69, 158 (1996).
14. S. Logothetidis, J. Petalas, and S. Ves, J. Appl. Phys. 79, 1040 (1996).
15. N. Konofaos and C. B. Thomas, J. Appl. Phys. 81, 6238 (1997).
16. N. Konofaos, I. P. McClean, and C. B. Thomas, Phys. Status Solidi A 161, 111 (1997).