Characterization of the BaTiO3/p-Si interface and applications

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 504-507

  Evangelou, E K ^a   Konofaos, N ^a   Craven, M R ^b   Cranton, W M ^b   Thomas, C B ^b  

^a UNIVERSITY OF IOANNINA   (Greece)

^b NOTTINGHAM TRENT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; CAPACITANCE; ELECTRIC ADMITTANCE; EVAPORATION; LUMINESCENT DEVICES; MAGNETRON SPUTTERING; MIS DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THIN FILM DEVICES;

ALTERNATING CURRENT THIN FILM ELECTROLUMINESCENT (ACTFEL) DEVICES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0034300373     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00483-9     Document Type: Article

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