Effect of Buffer Layer for Hf O2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition

Journal of the Electrochemical Society

Volumn 154, Issue 2, 2007, Pages

  Kim, Seokhoon ^a   Woo, Sanghyun ^a   Hong, Hyungseok ^a   Kim, Hyungchul ^a   Jeon, Hyeongtag ^a   Bae, Choelhwyi ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); RAPID THERMAL ANNEALING; SILICON; SUBSTRATES; THIN FILMS;

ATOMIC LAYER DEPOSITION; REMOTE PLASMA NITRIDATION (RPN);

HAFNIUM COMPOUNDS;

EID: 33846265390     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2401033     Document Type: Article

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