Thermal stability of ALD HfO2 thin films and interfacial layers on the oxynitride underlayer formed using remote plasma

Electrochemical and Solid-State Letters

Volumn 9, Issue 2, 2006, Pages

  Kim, Seokhoon ^a   Kim, Ju Youn ^b   Kim, Jinwoo ^a   Choi, Jihoon ^a   Kang, Hyunseok ^a   Bae, Choelhwyi ^b   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; GROWTH (MATERIALS); NITROGEN; PLASMAS; SURFACE CHEMISTRY; THERMODYNAMIC STABILITY;

EMISSION SPECIES; HFO2; OXYNITRIDE UNDERLAYERS; PLASMA POWER;

THIN FILMS;

EID: 33645505224     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2149210     Document Type: Article

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