-
1
-
-
0032069709
-
Si and SiGe millimeter-wave integrated circuits
-
May
-
P. Russer, "Si and SiGe millimeter-wave integrated circuits," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 590-603, May 1998.
-
(1998)
IEEE Trans. Microwave Theory Tech.
, vol.46
, pp. 590-603
-
-
Russer, P.1
-
3
-
-
0030270563
-
An Si 1.8 GHz RLC filter with tunable center frequency and quality factor
-
Oct
-
S. Pipilos, Y. P. Tsividis, J. Fenk, and Y. Papananos, "An Si 1.8 GHz RLC filter with tunable center frequency and quality factor," IEEE J. Solid-State Circuits, vol. 31, pp. 1517-1525, Oct. 1996.
-
(1996)
IEEE J. Solid-State Circuits
, vol.31
, pp. 1517-1525
-
-
Pipilos, S.1
Tsividis, Y.P.2
Fenk, J.3
Papananos, Y.4
-
4
-
-
0033318107
-
4 dielectric layers
-
Sept
-
4 dielectric layers," IEEE Microwave Guided Wave Lett., vol. 9, pp. 345-347, Sept. 1999.
-
(1999)
IEEE Microwave Guided Wave Lett.
, vol.9
, pp. 345-347
-
-
Lee, J.-H.1
Kim, D.-H.2
Park, Y.-S.3
Sohn, M.-K.4
Seo, K.-S.5
-
5
-
-
0024906129
-
Novel test structure to study location of breakdown for trench capacitor
-
Mar
-
K. Kishi, T. Yoshida, T. Watanabe, T. Tanaka, and S. Shinozaki, "Novel test structure to study location of breakdown for trench capacitor," in Proc. Int. Conf. Microelectronic Test Structures, Mar. 1989, pp. 245-250.
-
(1989)
Proc. Int. Conf. Microelectronic Test Structures
, pp. 245-250
-
-
Kishi, K.1
Yoshida, T.2
Watanabe, T.3
Tanaka, T.4
Shinozaki, S.5
-
6
-
-
0029509348
-
Three-dimensional passive circuit technology for ultra-compact MMIC's
-
Dec
-
M. Hirano, K. Nishikawa, I. Toyoda, S. Aoyama, S. Sugitani, and K. Yamasaki, "Three-dimensional passive circuit technology for ultra-compact MMIC's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2845-2850, Dec. 1995.
-
(1995)
IEEE Trans. Microwave Theory Tech.
, vol.43
, pp. 2845-2850
-
-
Hirano, M.1
Nishikawa, K.2
Toyoda, I.3
Aoyama, S.4
Sugitani, S.5
Yamasaki, K.6
-
7
-
-
0030120399
-
A novel capacitor technology based on porous silicon
-
V. Lehmann, W. HiSnlein, H. Reisinger, A. Spitzer, H. Wendt, and J. Wilier, "A novel capacitor technology based on porous silicon," Thin Solid Films, vol. 276, pp. 138-142, 1996.
-
(1996)
Thin Solid Films
, vol.276
, pp. 138-142
-
-
Lehmann, V.1
HiSnlein, W.2
Reisinger, H.3
Spitzer, A.4
Wendt, H.5
Wilier, J.6
-
8
-
-
0034207376
-
High-value MOS capacitor arrays in ultradeep trenches in silicon
-
F. Roozeboom, R. Elfrink, J. Verhoeven, J. van den Meerakker, and F. Holthuysen, "High-value MOS capacitor arrays in ultradeep trenches in silicon," Microelectron. Eng., vol. 53, pp. 581-584, 2000.
-
(2000)
Microelectron. Eng.
, vol.53
, pp. 581-584
-
-
Roozeboom, F.1
Elfrink, R.2
Verhoeven, J.3
van den Meerakker, J.4
Holthuysen, F.5
-
9
-
-
3343008949
-
Semiconductor device and method of integrating trench structures
-
Dec
-
G. Grivna, "Semiconductor device and method of integrating trench structures," U.S. Patent 6 498 069, Dec. 24, 2002.
-
(2002)
U.S. Patent 6 498 069
, pp. 24
-
-
Grivna, G.1
-
10
-
-
0031233720
-
Integrated RF components in a SiGe bipolar technology
-
Sept
-
J. N. Burghartz, M. Soyuer, K. A. Jenkins, M. Kies, M. Dolan, K. J. Stein, J. Malinowski, and D. L. Harame, "Integrated RF components in a SiGe bipolar technology," IEEE J. Solid-State Circuits, vol. 32, pp. 1440-1445, Sept. 1998.
-
(1998)
IEEE J. Solid-State Circuits
, vol.32
, pp. 1440-1445
-
-
Burghartz, J.N.1
Soyuer, M.2
Jenkins K., A.3
Kies, M.4
Dolan, M.5
Stein, K.J.6
Malinowski, J.7
Harame, D.L.8
|