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Volumn 25, Issue 7, 2004, Pages 468-470

RF characteristics of a high-performance, 10-fF/μ2 capacitor in a deep trench

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PASSIVE NETWORKS; POLYSILICON; SILICON NITRIDE; VOLTAGE MEASUREMENT;

EID: 3342948724     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831195     Document Type: Article
Times cited : (11)

References (10)
  • 1
    • 0032069709 scopus 로고    scopus 로고
    • Si and SiGe millimeter-wave integrated circuits
    • May
    • P. Russer, "Si and SiGe millimeter-wave integrated circuits," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 590-603, May 1998.
    • (1998) IEEE Trans. Microwave Theory Tech. , vol.46 , pp. 590-603
    • Russer, P.1
  • 2
  • 3
    • 0030270563 scopus 로고    scopus 로고
    • An Si 1.8 GHz RLC filter with tunable center frequency and quality factor
    • Oct
    • S. Pipilos, Y. P. Tsividis, J. Fenk, and Y. Papananos, "An Si 1.8 GHz RLC filter with tunable center frequency and quality factor," IEEE J. Solid-State Circuits, vol. 31, pp. 1517-1525, Oct. 1996.
    • (1996) IEEE J. Solid-State Circuits , vol.31 , pp. 1517-1525
    • Pipilos, S.1    Tsividis, Y.P.2    Fenk, J.3    Papananos, Y.4
  • 9
    • 3343008949 scopus 로고    scopus 로고
    • Semiconductor device and method of integrating trench structures
    • Dec
    • G. Grivna, "Semiconductor device and method of integrating trench structures," U.S. Patent 6 498 069, Dec. 24, 2002.
    • (2002) U.S. Patent 6 498 069 , pp. 24
    • Grivna, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.