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Volumn 56, Issue 1-2, 2001, Pages 169-175

New materials for active and passive integrated devices for wireless applications

Author keywords

High permittivity materials solutions; Integrated circuit; Wireless applications

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; CMOS INTEGRATED CIRCUITS; ELECTRONIC COMMERCE; LEAKAGE CURRENTS; PERMITTIVITY; WIRELESS TELECOMMUNICATION SYSTEMS; WORLD WIDE WEB;

EID: 0035341561     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00522-0     Document Type: Article
Times cited : (7)

References (9)
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  • 2
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  • 3
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    • Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low loss substrates
    • J.N. Burghartz et al., Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low loss substrates, in: Proceedings 1996 IEDM, 1996, pp. 96-102.
    • (1996) Proceedings 1996 IEDM , pp. 96-102
    • Burghartz, J.N.1
  • 4
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    • US Patent No. 5478773
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    • Dow, S.1
  • 6
    • 0032164864 scopus 로고    scopus 로고
    • Detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology
    • M. Park, S. Lee, C. Kim, H. Yu, K. Nam, Detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology, IEEE Trans. Electron Dev. 45 (9) (1998) 1953.
    • (1998) IEEE Trans. Electron Dev. , vol.45 , Issue.9 , pp. 1953
    • Park, M.1    Lee, S.2    Kim, C.3    Yu, H.4    Nam, K.5
  • 7
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    • Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier
    • J.Y.-C. Change, A.A. Abidi, M. Gaitan, Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier, IEEE Trans. Electron Dev. 14 (5) (1993) 246.
    • (1993) IEEE Trans. Electron Dev. , vol.14 , Issue.5 , pp. 246
    • Change, J.Y.-C.1    Abidi, A.A.2    Gaitan, M.3
  • 8
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    • A novel buried oxide isolation for monolithic RF inductors on silicon
    • H. Erzgraeber et al., A novel buried oxide isolation for monolithic RF inductors on silicon, in: Proceedings IEDM, 1998, p. 535.
    • (1998) Proceedings IEDM , pp. 535
    • Erzgraeber, H.1
  • 9
    • 0033314266 scopus 로고    scopus 로고
    • Integration of high-Q inductors in a latch-up resistance CMOS technology
    • M. Frei et al., Integration of high-Q inductors in a latch-up resistance CMOS technology, in: Proceedings IEDM, 1999, p. 757.
    • (1999) Proceedings IEDM , pp. 757
    • Frei, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.