Gate tunneling current fluctuations associated with random dopant effects

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 23-26

  Toriyama, Shuichi ^a   Matsuzawa, Kazuya ^a   Sano, Nobuyuki ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; STATISTICAL METHODS; THICKNESS MEASUREMENT;

CURRENT FLUCTUATIONS; GATE TUNNELING; RANDOM DOPANT EFFECTS; RANDOM DOPANTS;

GATES (TRANSISTOR);

EID: 33845881161     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201463     Document Type: Conference Paper

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