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Volumn 33, Issue 4, 1998, Pages 501-506

Influence of polysilicon deposition conditions on the characteristics of oxide-nitride-oxide memory capacitors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0032381898     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (11)
  • 4
    • 3242845624 scopus 로고
    • edited by H. J. Leamy, G. E. Pike and C. H. Seager North-Holland, N. Y.
    • K. C. Saraswat, Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike and C. H. Seager (North-Holland, N. Y., 1982), p. 261.
    • (1982) Grain Boundaries in Semiconductors , pp. 261
    • Saraswat, K.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.