Surface morphology and I-V characteristics of single-crystal, polycrystalline, and amorphous silicon FEA's

IEEE Electron Device Letters

Volumn 20, Issue 5, 1999, Pages 215-218

  Lee, Jong Duk ^a   Shim, Byung Chang ^a   Uh, Hyung Soo ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; FLAT PANEL DISPLAYS; MORPHOLOGY; OXIDATION; OXIDES; PHOSPHORUS; SCANNING ELECTRON MICROSCOPY; SURFACES;

FIELD EMITTER ARRAYS; NATIVE OXIDE; POLYCRYSTALLINE SILICON; SINGLE CRYSTAL SILICON;

SEMICONDUCTING SILICON;

EID: 0032627778     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.761019     Document Type: Article

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