Depletion layer of gate poly-Si

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2265-2271

  Watanabe, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Depletion layer; Gate poly Si; Metal insulator structures; MOS devices; Silicon

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); IMPURITIES; IONIZATION; ITERATIVE METHODS;

DEPLETION LAYERS; GATE POLY-SILICON; METAL-INSULATOR STRUCTURES;

POLYSILICON;

EID: 33744807537     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856791     Document Type: Article

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