Scaling effects on gate leakage current

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1779-1784

  Watanabe, Hiroshi ^a   Matsuzawa, Kazuya ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Band gap narrowing (BGN); Device simulation; Direct tunneling (DT); Incomplete impurity ionization

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); IONIZATION;

GATE LEAKAGE CURRENTS;

LEAKAGE CURRENTS;

EID: 0043028448     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815140     Document Type: Article

References (3)

1. H. Watanabe and S. Takagi, "Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current," J. Appl. Phys., vol. 90, pp. 160-1607, Aug. 2001.
2. H. Watanabe, K. Matsuzawa, and S. Takagi, "Impact of two-dimensional structure of nMOSFETs on direct tunnel gate current," in Extended Abstracts Int. Cont. Solid State Device Materials, Tokyo, Japan, 2001, pp. 142-143.
3. A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation," J. Appl. Phys., vol. 84, pp. 3684-3695, Jan. 1998.