Degradation of electrical properties of silicon detectors under 3 MeV proton irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 106-110

  Siad, M ^a   Keffous, A ^b   Belkacem, Y ^b   Menari, H ^b   Mamma, S ^a   Lakhdar Chaouch, C ^a  

^a CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

^b L'Unite de Developpement de la Technologie du Silicium   (Algeria)

Author keywords

Detector; Proton; Radiation effects; Silicon

Indexed keywords

DOPING (ADDITIVES); DOSIMETRY; PROTON IRRADIATION; RADIATION DETECTORS; RADIATION EFFECTS; SILICON;

SILICON DETECTORS;

NUCLEAR PHYSICS;

EID: 0142095147     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01883-7     Document Type: Conference Paper

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