Proton damage effects on GaAs/GaAiAs vertical cavity surface emitting lasers

Journal of Applied Physics

Volumn 94, Issue 12, 2003, Pages 7757-7763

  Le Metayer, P ^a   Gilard, O ^a   Germanicus, R ^a   Campillo, D ^b   Ledu, F ^b   Gazes, J ^b   Falo, W ^b   Chatry, C ^b  

^a CNES   (France)

^b TRAD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; PROTON IRRADIATION; PROTONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SPACE APPLICATIONS;

ENERGETIC PARTICLES; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0346935146     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622113     Document Type: Article

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