Effects of high energy proton irradiation on DC performance of GaAs metal-semiconductor field effect transistors

Journal of the Electrochemical Society

Volumn 149, Issue 4, 2002, Pages

  Luo, B ^a   Johnson, J W ^a   Ren, F ^a   Allums, K K ^a   Abernathy, C R ^a   Pearton, S J ^a   Dwivedi, R ^b   Fogarty, T N ^b   Wilkins, R ^b  

^a University of Florida   (United States)

^b PRAIRIE VIEW A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRON TRAPS; PERFORMANCE; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHANNEL DOPING; DEGRADATION MECHANISM; DIODE IDEALITY FACTOR; DRAIN SOURCE CURRENT; PROTON DOSE; SHEET RESISTANCE;

MESFET DEVICES;

EID: 0036530762     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1452121     Document Type: Article

References (15)