Fabrication of a nanoelectromechanical switch using a suspended carbon nanotube

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Cha, S N ^a   Jang, J E ^a   Choi, Y ^a   Amaratunga, G A J ^a   Kang, D J ^a,b   Hasko, D G ^c   Jung, J E ^d   Kim, J M ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BENZENE; CARBON NANOTUBES; ELECTRIC RESISTANCE; ELECTRIC SWITCHES; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTROSTATICS; GATES (TRANSISTOR); POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; VOLTAGE CONTROL;

ELECTROMECHANICAL SWITCHING; ELECTROSTATIC CHARGES; ISOPROPYL ALCOHOL (IPA); SELF-ALIGNED ELECTRODE;

NANOTECHNOLOGY;

EID: 17044418152     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1868064     Document Type: Article

References (23)

1. H. W. Kroto, J. R. Heath, S. C. O'Brien, R. F. Curl, and R. E. Smally, Nature (London) 318, 162 (1985).
2. S. Iijima, Nature (London) 354, 56 (1991).
3. J. P. Salvetat, J. M. Bonard, N. H. Thomson, A. J. Kulik, L. Forro, W. Benoit, and L. Zuppiroli, Appl. Phys. A: Mater. Sci. Process. 69, 255 (1999).
4. R. S. Ruoff, J. Tersoff, D. C. Lorents, S. Subramoney, and B. Chan, Nature (London) 364, 514 (1993).
5. N. Chopra, L. Benedict, V. Crespi, M. Cohen, S. Luoie, and A. Zettl, Nature (London) 377, 135 (1995).
6. J. F. Despres, E. Daguerre, and K. Lafdi, Carbon 33, 87 (1995).
7. M. L. Nardelli, B. I. Yakobson, and J. Bernholc, Phys. Rev. Lett. 81, 4656 (1998).
8. P. Kim and C. M. Lieber, Science 286, 2184 (1999).
9. W. B. Choi, S. Chae, E. Bae, J. Lee, B. Cheong, J. R. Kim, and J. J. Kim, Appl. Phys. Lett. 82, 275 (2003).
10. T. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C. Cheung, and C. M. Lieber, Science 289, 94 (2000).
11. P. G. Collins, K. B. Bradley, M. Ishigami, and A. Zettl, Science 287, 1801 (2000).
12. C. K. W. Adu, G. U. Sumanasekera, B. K. Pradhan, H. E. Romero, and P. C. Eklund, Chem. Phys. Lett. 337, 31 (2001).
13. M. Dequesnes, S. V. Rotkin, and N. R. Aluru, Nanotechnology 13, 120 (2002).
14. J. M. Kinaret, T. Nord, and S. Viefers, Appl. Phys. Lett. 82, 1287 (2003).
15. J. Nygard and D. H. Cobden, Appl. Phys. Lett. 79, 4216 (2001).
16. L. Liu, C. S. Jayanthi, M. Tang, S. Y. Wu, T. W. Tombler, C. Zhou, L. Alexseyev, J. Kong, and H. Dai, Phys. Rev. Lett. 84, 4950 (2000).
17. T. W. Tombler, C. Zhou, L. Alexseyev, J. Kong, H. Dai, L. Liu, C. S. Jayanthi, and M. Tang, Nature (London) 405, 769 (2000).
18. Y. Zhang, N. W. Franklin, R. J. Chen, and H. Dai, Chem. Phys. Lett. 331, 35 (2000).
19. Y. Zheng and H. Dai, Appl. Phys. Lett. 77, 3015 (2000).
20. S.-B. Lee, L. A. Robinson, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. G. Hasko, and H. Ahmed, J. Nanosci. Nanotechnol. 3, 325 (2003).
21. L. A. Robinson, S.-B. Lee, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. A. Williams, D. G. Hasko, and H. Ahmed, Nanotechnology 14, 290 (2003).
22. J. Lefebvre, M. Radosavljevic, and A. T. Johnson, Appl. Phys. Lett. 76, 3828 (2000).
23. N. R. Franklin, Q. Wang, T. W. Tombler, A. Javey, M. Shim, and H. Dai, Appl. Phys. Lett. 81, 913 (2002).