Fabrication of Pt-Si Schottky diodes using soft lithographic patterning and selective chemical vapor deposition

Langmuir

Volumn 15, Issue 6, 1999, Pages 2188-2193

  Erhardt, Martin K ^a   Nuzzo, Ralph G ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; LITHOGRAPHY; METALLIZING; PLASTIC FILMS; PLATINUM ALLOYS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

MICROMOLDING IN CAPILLARIES (MIMIC); SELECTIVE PLATINUM CHEMICAL VAPOR DEPOSITION;

METALLIC FILMS;

EID: 0344672608     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la9812222     Document Type: Article

References (28)

1. Streetman, B. G. Solid State Electronic Devices; Prentice-Hall: Englewood Cliffs, NJ, 1995.
2. Xia, Y.; Whitesides, G. M. Angew. Chem., Int. Ed. Engl. 1998, 37, 550.
3. Maore, G. Electrochem. Soc. Interface 1997, Spring, 18.
4. Mogab, C. J. In VLSI Technology; Sze, S. M., Ed.; McGraw-Hill: New York, 1983; p 303.
5. Xia, Y.; Kim, E.; Whitesides, G. M. Chem. Mater. 1994, 8, 1558.
6. Jeon, N. L.; Hu, J.; Whitesides, G. M.; Erhardt, M. K.; Nuzzo, R. G. Adv. Mater. 1998, 10, 1466.
7. Hu, J.; Beck, R. G.; Westervelt, R. M.; Whitesides, G. M. Adv. Mater. 1998, 10, 574.
8. Terris, B. D.; Mamin, H. J.; Best, M. E.; Logan, J. A.; Rugar, D.; Rishton, S. A. Appl. Phys. Lett. 1998, 69, 4262.
9. Martin, C. R. Science 1994, 266, 1961.
10. Garnier, F.; Hajlaoui, R.; Yassar, A.; Srivastava, P. Science 1994, 265, 1684.
11. Chou, S. Y.; Krauss, P. R.; Zhang, W.; Guo, L.; Zhuang, L. J. Vac. Sci. Technol., B 1997, 15, 2897.
12. Mayer, J. M.; Lau, S. S. Electronic Materials Science; Macmillan: New York, 1990.
13. Jeon, N. L.; Lin, W.; Erhardt, M. K.; Girolami, G. S.; Nuzzo, R. G. Langmuir 1997, 13, 3833.
14. Jeon, N. L.; Clem, P. G.; Nuzzo, R. G.; Payne, D. A. J. Mater. Res. 1995, 10, 2996.
15. Kim, E.; Xia, Y.; Whitesides, G. M. Nature 1995, 376, 581.
16. Higashi, G. S.; Chabal, Y. J.; Trucks, G. W.; Raghavachari, K. Appl. Phys. Lett. 1990, 56, 656.
17. Kwak, B. S.; First, P. N.; Erbil, A.; Wilkens, B. J.; Budai, J. D.; Chisholm, M. F.; Boatner, L. A. J. Appl. Phys. 1992, 72, 3735.
18. Vellaikal, M.; Streiffer, S. K.; Woolcott, R. R., Jr.; Kingon, A. I. In Polycrystalline Thin Films: Structure, Texture, Properties, and Applications II, Materials Research Society Symposium Proceedings, Vol. 403; Frost, H., et al., Eds.; Materials Research Society: Pittsburgh, PA, 1996; p 27.
19. Xue, Z.; Strouse, M. J.; Shuh, D. K.; Knobler, C. B.; Kaesz, H. D.; Hicks, R. F.; Williams, R. S. J. Am. Chem. Soc. 1989, 111, 8779.
20. Murarka, S. P. Suicides for VLSI Applications; Academic: Orlando, FL, 1983.
21. Crider, C. A.; Poate, J. M.; Rowe, J. E.; Sheng, T. T. J. Appl. Phys. 1981, 52, 2860.
22. Ottaviani, G. J. Vac. Sci. Technol. 1979, 16, 1112.
23. (b) Canali, C.; Catellani, C.; Prudenziati, M.; Wadlin, W. H.; Evans, C. A., Jr. Appl. Phys. Lett. 1977, 31, 43.
24. Nicolet, M.-A.; Lau, S. S. Formation and Characterization of Transition-Metal Suicides. In VLSI Electronics: Microstructure Science; Einspruch, N. G., Larrabee, G. B., Eds.; Academic: New York, 1983; Vol. 6, p 330.
25. (b) Ottaviani, G.; Mayer, J. W. Suicide Formation. In Reliability and Degradation - Semiconductor Devices and Circuits; Howes, M. J., Morgan, D. V., Eds.; Wiley: Chichester, 1981; p 105.
26. Morabito, J. M.; Rand, M. J. Thin Solid Films 1974, 22, 293.
27. Rand, M. J.; Roberts, J. F. Appl. Phys. Lett. 1974, 24, 49.
28. (b) Rand, M. J. J. Electrochem. Soc. 1973, 120, 686.