Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si-SiO2 interfaces

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 1-14

  Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Atomic structure; Si SiO2 interfaces; Thermal stability

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; MOLECULAR VIBRATIONS; PHASE SEPARATION; REACTION KINETICS; SEMICONDUCTING FILMS; SILICA; THERMODYNAMIC STABILITY; THERMOOXIDATION; THIN FILMS;

PLASMA DEPOSITION; SILICON SUBOXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032066849     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00014-3     Document Type: Article

References (37)

1. H.R. Philipp, J. Non-Cryst. Solids 8-10 (1972) 627.
2. M.A. Paesler, D.A. Anderson, E.C. Freeman, G. Moddel, W. Paul, Phys. Rev. Lett. 41 (1978) 1492.
3. J.C. Knights, R.A. Street, G. Lucovsky, J. Non-Cryst. Solids 35&36 (1980) 279.
4. R.S. Crandall, Phys. Rev. B 24 (1981) 7457.
5. Y. Kanemitsu, H. Uto, Y. Masumoto, T. Masumoto, T. Futagi, H. Mimura, Phys. Rev. B 48 (1993) 2827.
6. G. Lucovsky, A. Banerjee, B. Hinds, B. Claflin, K. Koh, H. Yang, J. Vac. Sci. Technol. B 15 (1997) in press.
7. D.V. Tsu, B.N. Davidson, G. Lucovsky, Phys. Rev. B 40 (1989) 1795.
8. G.N. Parsons, G. Lucovsky, Physics B 41 (1990) 1664.
9. A. Banerjee, G. Lucovsky, MRS Symp. Proc. 420 (1995) 405.
10. X. Chen, J.M. Gibson, Appl. Phys. Lett. 70 (1997) 1462.
11. B. Hinds, G. Lucovsky, A. Banerjee, R. Johnson, MRS Symp. Proc., 1997.
12. B.J. Hinds, F. Wang, D.M. Wolfe, C.L. Hinkle, G. Lucovsky, these Proceedings, p. 506.
13. M. Zacharias, D. Dimova-Malinovska, M. Stutzmann, Philos. Mag. B 73 (1996) 799.
14. G. Lucovsky, Solid State Commun. 29 (1979) 571.
15. J.C. Carver, R.C. Gray, D.M. Hercules, J. Am. Chem. Soc. 96 (1984) 6851.
16. R.T. Sanderson, Chemical Bonds and Bond Energy, Chap. 2, Academic Press, New York, 1971.
17. J.E. Huheey, Inorganic Chemistry, Chap. 6, Harper, NY, 1978.
18. S.S. Chao, J.E. Tyler, Y. Takagi, P.G. Pai, G. Lucovsky, S.Y. Lin, C.K. Wong, M.J. Martini, J. Vac. Sci. Tech. A 4 (1986) 1574.
19. J.T. Fitch, E. Kobeda, G. Lucovsky, E.A. Irene, J. Vac. Sci. Technol. B 7 (1989) 153.
20. J. Pankove, Appl. Phys. Lett. 32 (1978) 812.
21. D. Mathiot, A. Straboni, E. Andre, P. Debenest, J. Appl. Phys. 73 (1993) 8215.
22. J. Ahn, J. Kim, G.Q. Lo, D.-L. Kwong, Appl. Phys. Lett. 60 (1992) 2089.
23. D.R. Lee, G. Lucovsky, M.R. Denker, C. Magee, J. Vac. Sci. Technol. A 13 (1995) 607.
24. D.R. Lee, C. Parker, J.R. Hauser, G. Lucovsky, J. Vac. Sci. Technol. B 13 (1995) 1778.
25. 2 interface, in: H.Z. Massoud, E.H. Poindexter, C.R. Helms (Eds.), Electrochem. Soc., Pennington, 1996, p. 441.
26. F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarnoff, G. Hollinger, Phys. Rev. B 38 (1988) 6084.
27. M.M. Banaszak-Holl, S. Lee, F.R. McFeely, Appl. Phys. Lett. 65 (1994) 1097.
28. W.K. Choi, F.W. Poon, F.C. Loh, K.L. Tan, J. Appl. Phys. 81 (1997) 7386, and references therein.
29. M.-T. Tang, K.W. Evans-Lutterodt, G.S. Higashi, T. Boone, Appl. Phys. Lett. 62 (1993) 3144.
30. M.L. Green, D. Brasen, K.W. Evans-Lutterholt, L.C. Feldman, K. Krisch, W. Lennard, H.-T. Tang, L. Manchanda, M.-T. Tang, Appl. Phys. Lett. 65 (1994) 848.
31. E.P. Gusev, H.C. Lu, T. Gustafsson, E. Garfunkel, Phys. Rev. B 52 (1995) 1759.
32. T. Yasuda, Y. Ma, S. Habermehl, G. Lucovsky, Appl. Phys. Lett. 60 (1992) 434.
33. C.H. Bjorkman, T. Yasuda, C.E. Shearon Jr., U. Emmerichs, C. Meyer, K. Leo, H. Kurz, J. Vac. Sci. Technol. B 11 (1993) 1521.
34. J. Dadap, X.F. Hu, M.H. Anderson, M.C. Downer, M. terBeck, J.K. Lowell, O.A. Aktsipetrov, Phys. Rev. Lett. 41 (1978) 406.
35. T. Sakoda, Matsumura, Proceedings of ISCSI, Karuizawa, Japan, 1996.
36. F.M. Ross, J.M. Gibson, R.D. Twesten, Surf. Sci. 310 (1994) 243.
37. P.O. Hahn, M. Henzler, J. Vac. Sci. Technol. A 2 (1984) 574.