Kinetic mechanisms for the deactivation of nitrogen in SiC

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 621-624

  Bockstedte, M ^a   Mattausch, A ^a   Pankratov, O ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Dopants; Electrical activation; Nitrogen; Vacancy clusters

Indexed keywords

AGGLOMERATION; COMPLEXATION; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; KINETIC THEORY; NITROGEN;

AB INITIO THEORY; ELECTRICAL ACTIVATION; VACANCY CLUSTERS;

SILICON CARBIDE;

EID: 33845620698     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.621     Document Type: Conference Paper

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