Solubility of nitrogen and phosphorus in 4H-SiC: A theoretical study

Applied Physics Letters

Volumn 85, Issue 1, 2004, Pages 58-60

  Bockstedte, Michel ^a   Mattausch, Alexander ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPLEXATION; CONCENTRATION (PROCESS); ELECTRONS; GROWTH KINETICS; PHOSPHORUS; POINT DEFECTS; SEMICONDUCTOR DOPING; SOLUBILITY; SUBLIMATION;

DOPANTS; ELECTRICAL ACTIVATION; SUBLIMATION GROWTH; THERMODYNAMIC EQUILIBRIUM;

SILICON CARBIDE;

EID: 3242675338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769075     Document Type: Article

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