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Volumn 483-485, Issue , 2005, Pages 527-530

Kinetic aspects of the interstitial-mediated boron diffusion in SiC

Author keywords

Boron diffusion; Deep acceptor; Kick out mechanism

Indexed keywords

DIFFUSION; ION IMPLANTATION; REACTION KINETICS; SILICON CARBIDE;

EID: 35148850650     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.527     Document Type: Conference Paper
Times cited : (4)

References (13)
  • 11
    • 35148874670 scopus 로고    scopus 로고
    • M. Bockstedte, A. Mattausch and O. Pankratov: Phys. Rev. B In print
    • M. Bockstedte, A. Mattausch and O. Pankratov: Phys. Rev. B In print


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.