Step bunching behaviour on the {0001} surface of hexagonal SiC

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 613-622

  Ohtani, Noboru ^a   Katsuno, Masakazu ^a   Aigo, Takashi ^a   Fujimoto, Tatsuo ^a   Tsuge, Hiroshi ^a   Yashiro, Hirokatsu ^a   Kanaya, Masatoshi ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; LATTICE CONSTANTS; MORPHOLOGY; OPTICAL MICROSCOPY; REACTION KINETICS; SILICON CARBIDE; SURFACE TOPOGRAPHY; THERMODYNAMIC PROPERTIES;

NOMARSKI OPTICAL MICROSCOPY; STEP BUNCHING; STEP REPULSIVE INTERACTION; SURFACE POLARITY;

CRYSTAL GROWTH;

EID: 0033875227     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00877-5     Document Type: Article

References (30)

1. G. Pensl, H. Morkoç, B. Monemar, E. Jansén (Eds.), Proceedings of the Seventh International Conference on Silicon Carbide, III-Nitrides and Related Materials, Trans. Tech. Publications Ltd., Switzerland, 1998.
2. Tsvetkov V., Glass R.C., Henshall D., Asbury D., Carter C.H. Jr. Mater. Sci. Forum. 264-268:1998;17.
3. N. Ohtani, J. Takahashi, M. Katsuno, T. Aigo, H. Yashiro, M. Kanaya, Proceedings of the US-Japan Conference on Wide Band Gap Semiconductor Technology for Next Generation Electronic and Photonic Devices, International Technology Research Institute, Loyola College, MA, USA, 1998, p. 36.
4. Dudley M., Wang S., Huang W., Carter C.H. Jr., Tsvetkov V.F., Fazi C. J. Phys. D. 28:1995;A63.
5. Huang X.R., Dudley M., Vetter W.M., Huang W., Wang S., Carter C.H. Jr. Appl. Phys. Lett. 74:1999;353.
6. Ohtani N., Takahashi J., Katsuno M., Yashiro H., Kanaya M. Electron. Commun. Japan, Part 2. 81:1998;8.
7. N. Ohtani, in preparation.
8. Kimoto T., Matsunami H. J. Appl. Phys. 75:1994;850.
9. Takahashi J., Kanaya M., Fujiwara Y. J. Crystal Growth. 135:1994;61.
10. Stein R.A., Lanig P., Leibenzeder S. Mater. Sci. Eng. B. 11:1992;69.
11. Takahashi J., Ohtani N., Kanaya M. Jpn. J. Appl. Phys. 34:1995;4694.
12. van Wingerden J., van Halen E.C., Werner K., Scholte P.M.L.O., Tuinstra F. Surf. Sci. 352-354:1996;641.
13. Alfonso C., Bermond J.M., Heyraud J.C., Métois J.J. Surf. Sci. 262:1992;371.
14. Verma A.R., Krishna P. Polymorphism and Polytypism in Crystals. 1966;Wiley, New York.
15. Tyc S. J. Phys. I France. 4:1994;617.
16. Kimoto T., Itoh A., Matsunami H. Appl. Phys. Lett. 66:1995;3645.
17. Powell J.A., Larkin D.J., Abel P.B. J. Electron. Mater. 24:1995;295.
18. Ohtani N., Katsuno M., Takahashi J., Yashiro H., Kanaya M. Surf. Sci. 398:1998;L303.
19. Wang X.S., Goldberg J.L., Bartelt N.C., Einstein T.L., Williams E.D. Phys. Rev. Lett. 65:1990;2430.
20. Heine V., Cheng C., Needs R.J. J. Am. Ceram. Soc. 74:1991;2630.
21. Schwoebel R.L., Shipsey E.J. J. Appl. Phys. 37:1966;3682.
22. Ohtani N., Katsuno M., Takahashi J., Yashiro H., Kanaya M. Phys. Rev. B. 59:1999;4592.
23. Marchenko V.I. A.Ya. Parshin, Sov. Phys. JETP. 52:1980;129.
24. Cabrera N., Vermilyea D.A. Doremus R., Roberts B., Turnbull D. Growth and Perfection of Crystals. 1958;393 Wiley, New York.
25. Frank F.C. Doremus R., Roberts B., Turnbull D. Growth and Perfection of Crystals. 1958;411 Wiley, New York.
26. van der Eerden J.P., Müller-Krumbhaar H. Phys. Rev. Lett. 57:1986;2431.
27. Onoue K., Nishikawa T., Katsuno M., Ohtani N., Yashiro H., Kanaya M. Jpn. J. Appl. Phys. 35:1996;2240.
28. Ohtani N., Katsuno M., Takahashi J., Yashiro H., Kanaya M. J. Appl. Phys. 83:1998;4487.
29. Sato M., Uwaha M. Phys. Rev. B. 51:1995;11172.
30. Muehlhoff L., Choyke W.J., Bozack M.J., Yates J.T. Jr. J. Appl. Phys. 60:1986;2842.