Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 53-56

  Nishizawa, Shin Ichi ^a   Pons, Michel ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

Chemical vapor deposition; Doping; Etching; Growth model; Growth rate; Simulation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; MATHEMATICAL MODELS; NITROGEN; NUMERICAL ANALYSIS; SILICON CARBIDE;

ALUMINUM DOPING; GROWTH MODELS; HETEROGENEOUS MODELS; HORIZONTAL HOT-WALL REACTORS;

GROWTH RATE;

EID: 30344486882     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.53     Document Type: Conference Paper

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