Aluminum nitride substrate growth by halide vapor transport epitaxy

Journal of Crystal Growth

Volumn 250, Issue 1-2, 2003, Pages 1-6

  Bliss, D F ^a   Tassev, V L ^b   Weyburne, D ^a   Bailey, J S ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SOLID STATE SCIENTIFIC CORPORATION   (United States)

Author keywords

A3. Halide vapor phase epitaxy; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; PRESSURE EFFECTS; SUBSTRATES; VAPOR DEPOSITION; X RAY ANALYSIS;

CRYSTAL QUALITY;

VAPOR PHASE EPITAXY;

EID: 0037370175     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02179-6     Document Type: Conference Paper

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