High growth rate for slow scanning in electron-beam-induced deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7686-7690

  Hiroshima, Hiroshi ^a   Komuro, Masanori ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

10 nm scale; Electron beam lithography; Electron beam induced deposition; Secondary electron; Single electron transistor; WF6

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONDUCTIVE MATERIALS; TRANSISTORS;

ELECTRON BEAM INDUCED DEPOSITION (EBID); SINGLE ELECTRON TRANSISTORS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031362727     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7686     Document Type: Article

References (4)

1. H. Hiroshima, S. Okayama, M. Ogura, M. Komuro, H. Nakazawa, Y. Nakagawa, K. Ohi, and K. Tanaka: J. Vac. Sci. & Technol. B 13 (1995) 2514.
2. M. Komuro and H. Hiroshima: Microcirc. Eng. 35 (1997) 273.
3. M. Komuro and H. Hiroshima: Nihon Gakujutsu Shinkoukai, 151 Iinkai 40 Kai (Tokyo, 1997) p. 22. [in Japanese].
4. L. G. Pittaway: Proc. Electron Beam Symp. 5th Ann. Meet. (Boston, 1963) p. 88.