80+ GBit/s ETDM systems implementation: An overview of current technologies

2006 Optical Fiber Communication Conference, and the 2006 National Fiber Optic Engineers Conference

Volumn 2006, Issue , 2006, Pages

  Lee, W S ^a  

^a SHF Communication Technologies AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL EFFECTS; LIGHT TRANSMISSION; MICROELECTRONICS;

BIT RATES; ULTRA-HIGH SPEED MICRO-ELECTRONICS;

TIME DIVISION MULTIPLEXING;

EID: 33845356621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ofc.2006.215344     Document Type: Conference Paper

References (21)

1. M. Meghelli "A 108 Gbps multiplexer in 0.13um SiGe-bipolar Technology", ISSCC Digest, Feb. 2004, Paper 13.3
2. A. Joseph et al., "0.13 um 210 GHz fT SiGe HBTs - expanding the horizons of SiGe BiCMOS", ISSCC, 2002, pp. 180-181
3. Jae-Sung Rieh et al, "SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications", IEEE Transaction. on Microwave Theory and Techniques, Vol.52, October 2004, pp. 2390-2408
4. Jean-Olivier Plouchart, et al, "A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability", IEEE Transactions on Electron Devices, Vol. 52, July 2005, pp. 1370-1375
5. Kiyoshi Ishii, et al, "High-Bit-Rate Low-Power Decision Circuit Using InP-InGaAs HBT Technology", IEEE J of Solid-State Circuits, Vol. 40, July 2005, pp. 1583-1588
6. Gang He et al, "Self-Aligned InP DHBT with ft and fmax Over 300 GHz in a New Manufacturable Technology", IEEE Electron Devices Letters, Vol. 25, August 2004, pp. 520-522
7. James C. Li, et al, "A Submicrometer 252 GHz fT and 283 GHz fMAX InP DHBT With Reduced CBC Using Selectively Implanted Buried Subcollector (SIBS)", IEEE Electron Devices Letters, Vol. 26, March 2005, pp.136-138
8. K. Ishii, et al, "90 Gbit/s 0.5W decision circuit using InP/InGaAs double heterojunction bipolar transistors", IEE Electronics Letters, Vol. 40, August 2004, pp. 1020-1021
9. R.E. Makon, et al, "Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs", Electronics Letters, May 2005, Vol. 41, pp. 644-646
10. Koichi Murata, et al, "100-Gb/s Multiplexing and Demultiplexing IC Operations in InP HEMT Technology", IEEE J of Solid-State Circuits, VOL. 39, January 2004, pp. 207-213
11. C. Meliani, et al, "DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product", IEE Electronic Letters, September 2002, Vol. 38, pp. 1175-1177
12. S. Bollaert, et al, "fmax of 490 GHz metamorphic In0.52A10.48As/In0.53Ga0.47As HEMTs on GaAs substrate", IEE Electronics Letters, Vol. 38, April 2002, pp. 389-391
13. Yichuan Yu, et al, "80Gb/s ETDM Transmitter with a Traveling-Wave Electroabsorption Modulator", OFC 2005, Paper OWE1
14. M Sugiyama et al, "Driver-less 40Gb/s LiNbO3 Modulator with sub-1 V drive voltage", OFC 2002, PD FB6
15. W. S. Lee, et al, "Implementation of an 80 GBit/s Full ETDM Multi-format ASK Optical Transmitter", ECOC 2005, Paper We2.2.4
16. K. Schuh, et al, "85.4 Gbit/s ETDM Transmission over 401 km SSMF Applying UFEC", ECOC 2005 Postdeadline Paper Th4.1.4
17. Peter J. Winzer, Greg Raybon, and Marcus Duelk, "107-Gb/s optical ETDM transmitter for 100G Ethernet transport", ECOC 2005 Postdeadline Paper Th4.1.1
18. H.-G. Bach, et al, "InP-Based Waveguide-Integrated Photodetector with 100 GHz Bandwidth", IEEE Journal of Selected Topics on Quantum Electronics on Photodetectors and Imaging, 2004, Vol. 10, No. 4, pp. 668-672
19. Y. Muramoto, et al," 100 and 160 Gbit/s operation of uni-travelling-carrier photodiode module", Electronics Letters, 2004 Vol. 40 No. 6, pp. 378-380
20. H. Ito, et al,"High-speed and high -output InP-InGaAs Unitravelling-carrier photodiodes", IEEE J of Selected Topics in Quantum Electronics, Vol.10, No.4, 2004, pp. 709-727
21. A. Beling, et al, "Monolithically Integrated Balanced Photoreceiver OEIC Comprising a Distributed Amplifier for 40 Gbit/s Applications", OFC 2004, Paper TuM5