A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power mmWave digital and RF circuit capability

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1370-1375

  Plouchart, Jean Olivier ^a   Zamdmer, Noah ^a   Kim, Jonghae ^a   Trzcinski, Robert ^a   Narasimha, Shreesh ^a   Khare, Mukesh ^a   Wagner, Lawrence F ^a   Sweeney, Susan L ^a   Chaloux, Susan ^a  

^a IBM RESEARCH   (United States)

Author keywords

Distributed amplifier; Divider; Fmax; Ft; High speed circuits; RF circuits; Silicon on insulator (SOI) CMOS; System on chip (SoC)

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; ELECTRIC INDUCTORS; FIELD EFFECT TRANSISTORS; MILLIMETER WAVE DEVICES; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION LINE THEORY; VARACTORS;

DISTRIBUTED AMPLIFIER; DIVIDER; HIGH SPEED CIRCUITS; RF CIRCUITS; SOI CMOS; SYSTEM-ON-CHIP (SOC);

CMOS INTEGRATED CIRCUITS;

EID: 23944446418     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850638     Document Type: Article

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