DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product

Electronics Letters

Volumn 38, Issue 20, 2002, Pages 1175-1177

  Meliani, C ^a   Post, G ^a   Rondeau, G ^a   Decobert, J ^a   Mouzannar, W ^a   Dutisseuil, E ^a   Lefevre R ^a  

^a OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DATA COMMUNICATION SYSTEMS; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMITTERS; WAVEGUIDES;

CUTOFF FREQUENCY; DISTRIBUTED AMPLIFIER;

BROADBAND AMPLIFIERS;

EID: 0037179483     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020846     Document Type: Article

References (8)

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6. RONDEAU, G., BIBLEMONT, S., DECOBERT, J., and POST, G.: 'Monolithic PIN-HEMT photoreceiver integration'. Proc. Indium Phosphide and Related Materials, Williamsburg, VA, USA, May 2000, Paper IPRM 2000
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