Mid-infrared quantum dot photodetectors

Springer Series in Optical Sciences

Volumn 118, Issue , 2006, Pages 487-513

  Bhattacharya, P ^a   Stiff Roberts, A D ^b   Chakrabarti, S ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33845250203     PISSN: 03424111     EISSN: 15561534     Source Type: Book Series    
DOI: 10.1007/1-84628-209-8_15     Document Type: Article

References (72)

1. Piotrowski J and Gawron W. Ultimate performance of infrared photodetectors and figure of merit of detector material. Infrared Physics & Technology 1997; 38: 63-8
2. Norton PR. Status of infrared detectors. SPIE Proceedings 1998; 3379: 102-14
3. Rogalski A. Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays. Infrared Physics & Technology 1999; 40: 279-94
4. Bajaj J. State-of-the-art HgCdTe infrared devices. SPIE Proceedings 2000; 3948: 42-54
5. Reine MB. Review of HgCdTe photodiodes for IR detection. SPIE Proceedings 2000; 4028: 320-30
6. Baker IM and Maxey CD. Summary of HgCdTe 2D array technology in the UK. Journal of Electronic Materials 2001; 30: 682-9
7. Varesi JB, Bornfreund RE, Childs AC et al. Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates. Journal of Electronic Materials 2001; 30: 566-73
8. Levine BF. Quantum-well infrared photodetectors. Journal of Applied Physics 1993; 74: R1-R81
9. Gunapala SD and Bandara KMSV: Homojunction and Quantum-Well Infrared Detectors. In: MH Francombe, JL Vossen (ed). Academic Press, San Diego, 1995, pp.113-237
10. Gunapala SD, Bandara SV, Singh A et al. 640 × 486 long-wavelength two-color GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera. IEEE Transactions on Electron Devices 2000; 47: 963-71
11. Pan JL and Jr. CGF. Theory, fabrication, and characterization of quantum well infrared photodetectors. Material Science and Engineering. R, Reports: A review journal 2000; 28: 65-147
12. Tidrow MZ. Device physics and state-of-the-art of quantum well infrared photodetectors and arrays. Material Science and Engineering B 2000; 74: 45-51
13. Phillips J, Bhattacharya P, Kennerly SW, Beekman DW and Dutta M. Self-assembled InAs-GaAs quantum-dot intersubband detectors. IEEE Journal of Quantum Electronics 1999; 35: 936-43
14. Liu HC, Gao M, McCafferey J, Wasilewski ZR and Fafard S. Quantum dot infrared photodetectors. Applied Physics Letters 2001; 78: 79-81
15. Tang S-F, Lin S-Y and Lee S-C. Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector. Applied Physics Letters 2001; 78: 2428-30
16. Wang SY, Lin SD, Wu HW and Lee CP. Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer. Applied Physics Letters 2001; 78: 1023-5
17. Chen Z, Baklenov O, Kim ET et al. Normal incidence InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region. Journal of Applied Physics 2001; 89: 4558-63
18. Kang YH, Park J, Lee UH and Hong S. Effect of the dot size distribution on quantum dot infrared photoresponse and temperature-dependent dark current. Applied Physics Letters 2003; 82: 1099-101
19. Krishna S, Raghavan S, Winckel Gv et al. Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K. Applied Physics Letters 2003; 82: 2574-6
20. Ryzhii V. The theory of quantum-dot infrared phototransistors. Semiconductor Science and Technology 1996; 11: 759-65
21. Berryman KW, Lyon SA and Segev M. Mid-infrared photoconductivity in InAs quantum dots. Applied Physics Letters 1997; 70: 1861-3
22. Maimon S, Finkman E, Bahir G et al. Intersublevel transitions in InAs/ GaAs quantum dots infrared photodetectors. Applied Physics Letters 1998; 73: 2003-5
23. Phillips J, Kamath K and Bhattacharya P. Far-infrared photoconductivity in self-organized InAs quantum dots. Applied Physics Letters 1998; 72: 2020-2
24. Pan D, Towe E and Kennerly S. Normal-incidence intersubband (In, Ga)As/ GaAs quantum dot infrared photodetectors. Applied Physics Letters 1998; 73: 1937-9
25. Xu SJ, Chua SJ, Mei T et al. Characteristics of InGaAs quantum dot infrared photodetectors. Applied Physics Letters 1998; 73: 3153-5
26. Pan D, Towe E and Kennerly S. Photovoltaic quantum-dot infrared detectors. Applied Physics Letters 2000; 76: 3301-3
27. Stiff AD, Krishna S, Bhattacharya P and Kennerly S. Normal-incidence, high-temperature, mid-infrared InAs-GaAs vertical quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics 2001; 37: 1412-9
28. Krishna S, Stiff-Roberts AD, Phillips JD, Bhattacharya P and Kennerly SW. Hot dot detectors: Infrared quantum dot intersubband photodetectors are a promising technology for multiwavelength IR detection. IEEE Circuits & Devices 2002; 18: 14-24
29. Dereniak EL and Boreman GD. Infrared Detectors and Systems. Wiley, New York, 1996
30. Jiang H and Singh J. Strain distribution and electronic spectra of InAs/ GaAs self-assembled dots: An eight-band study. Physical Review B 1997; 56: 4696-701
31. Keating PN. Effect of invariance requirements on the elastic strain energy of crystals with application to the diamond structure. Physical Review 1966; 145: 637-45
32. Martin RM. Elastic properties of ZnS structure semiconductors. Physical Review B 1970; 1: 4005-11
33. Horiguchi N, Futatsugi T, Nakata Y et al. Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots. Japanese Journal of Applied Physics 1999; 38: 2559-61
34. Phillips J. Evaluation of the fundamental properties of quantum dot infrared detectors. Journal of Applied Physics 2002; 91: 4590-4
35. Singh J. Electronic and Optoelectronic Properties of Semiconductor Structures. Cambridge University Press, New York, 2003
36. Bockelmann U and Bastard G. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. Physical Review B 1990; 42: 8947-51
37. Benisty H, Sotomayor-Torres CM and Weisbuch C. Intrinsic mechanism for the poor luminescence properties of quantum-box systems. Physical Review B 1991; 44: 10945-8
38. Bhattacharya P, Kamath KK, Singh J et al. In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties. IEEE Transactions on Electron Devices 1999; 46: 871-83
39. 1-xAs/GaAs quantum dots. Physical Review B 1996; 54: 11532-8
40. 1-xAs/GaAs quantum dots by electroluminescence and time-resolved photoluminescence. Physical Review B 1996; 54: R5243-R6
41. 0.6As-GaAs self-organised quantum-dot lasers. IEEE Photonics Technology Letters 1997; 9: 1301-3
42. Urayama J, Norris TB, Singh J and Bhattacharya P. Observation of phonon bottleneck in quantum dot electronic relaxation. Physical review Letters 2001; 86: 4930-3
43. Klotzkin D and Bhattacharya P. Temperature dependence of dynamic and DC characteristics of quantum-well and quantum-dot lasers: A comparative study. Journal of Lightwave Technology 1999; 17: 1634-42
44. Kochman B, Stiff-Roberts AD, Chakrabarti S et al. Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors. IEEE Journal of Quantum Electronics 2003; 39: 459-67
45. Parker EHC, ed. 1985. New York: Plenum Press
46. 1-xAs quantum dots. Applied Physics Letters 1992; 61: 946-8
47. Steffen R, Koch T, Oshinowo J, Faller F and Forchel A. Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low-voltage electron beam lithography. Applied Physics Letters 1996; 68: 223-5
48. Ueno H, Moriyasu K, Wada Y et al. Conductance through laterally coupled quantum dots. Japanese Journal of Applied Physics 1999; 38: 332-5
49. Goldstein L, Glas F, Marzin JY, Charasse MN and LeRoux G. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices. Applied Physics Letters 1985; 47: 1099-101
50. 0.9 strained-layer superlattice on a GaAs substrate grown by low=pressure organometallic vapor phase epitaxy. Applied Physics Letters 1985; 47: 955-7
51. 1-xAs on GaAs using reflection high-energy electron diffraction. Journal of Vacuum Science and Technology B 1987; 5: 1162-6
52. Tabuchi M, Noda S and Sasaki A. Strain energy and critical thickness of heteroepitaxial InGaAs layers on GaAs substrate. Journal of Crystal Growth 1991; 115: 169-73
53. Leonard D, Krishnamurthy M, Reaves CM, Denbaars SP and Petroff PM. Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces. Applied Physics Letters 1993; 63: 3203-5
54. Xie Q, Chen P, Kalburge A et al. Realization of optically active strained InAs island quantum boxes on GaAs (100) via molecular beam epitaxy and the role of island induced strain fields. Journal of Crystal Growth 1995; 150: 357-63
55. Bimberg D, Grundmann M and Ledentsov NN. Growth, spectroscopy, and laser application of self-ordered III-V quantum dots. Materials Research Society Bulletin 1998; 23: 31-4
56. Bhattacharya P, Kamath K, Phillips J and Klotzkin D. Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications. Bulletin of Material Science 1999; 22: 519-29
57. Stranski IN and Krastanow L. Theory of orientation separation of ionic crystals. Sitzungsberichte 1938; Abteilung IIb. 146: 797-810
58. Bimberg D, Grundmann M and Ledentsov NN. Quantum Dot Heterostructures. John Wiley & Sons, Chichester, 1999
59. Caniou J. Passive Infrared Detection: Theory and Applications. Kluwer Academic Publishers, Boston, 1999
60. Rogalski A. Infrared Detectors. Gordon and Breach Science Publishers, Singapore, 2000
61. Kim E-T, Chen Z and Madhukar A. Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells. Applied Physics Letters 2001; 79: 3341-3
62. 0.85As dots-in-a-well detector. Applied Physics Letters 2002; 81: 1369-71
63. Weber A, Gauthier-Lafaye O, Julien FH et al. Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001). Applied Physics Letters 1999; 74: 413-5
64. Kim S, Mohseni H, Erdtmann M et al. Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector. Applied Physics Letters 1998; 73: 963-5
65. Liu JL, Wu WG, Balandin A, Jin GL and Wang KL. Intersubband absorption in boron-doped multiple Ge quantum dots. Applied Physics Letters 1999; 74: 185-7
66. Boucaud P, Thanh VL, Sauvage S, DéBarre D and Bouchier D. Intraband absorption in Ge/Si self-assembled quantum dots. Applied Physics Letters 1999; 74: 401-3
67. Liu JL, Wu WG, Balandin A et al. Observation of inter-sub-level transitions in modulation-doped Ge quantum dots. Applied Physics Letters 1999; 75: 1745-7
68. Yakimov AI, Dvurechenskii AV, Proskuryakov YY et al. Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dot. Applied Physics Letters 1999; 75: 1413-5
69. Miesner C, Röthig O, Brunner K and Abstreiter G. Mid-infrared photocurrent measurements on self-assembled Ge dots in Si. Physica E 2000; 7: 146-50
70. Yakimov AI, Dvurechenskii AV, Nikiforov AI and Proskuryakov YY. Interlevel Ge/Si quantum dot infrared photodetector. Journal of Applied Physics 2001; 89: 5676-81
71. Jiang X, Li SS and Tidrow MZ. Investigation of a multistack voltage-tunable four-color quantum-well infrared photodetector for mid- and long-wavelength infrared detection. IEEE Journal of Quantum Electronics 1999; 35: 1685-92
72. Li SS, Kim S-H, Moon J-H and Lee JH. A two-stack, multi-color quantum well infrared photodetector for mid- and long-wavelength infrared detection. Infrared Physics & Technology 2003; 44: 235-41