Mid-infrared photocurrent measurements on self-assembled Ge dots in Si

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 1, 2000, Pages 146-150

  Miesner, C ^a   Rothig O ^a   Brunner, K ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; INFRARED SPECTROSCOPY; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ENERGY TAIL; INTRAVALENCE BAND TRANSITIONS; QUANTUM DOT INFRARED PHOTODETECTORS; SELF ASSEMBLED QUANTUM DOTS; STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0342588018     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00268-4     Document Type: Article

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