Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low-voltage electron beam lithography

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 223-225

  Steffen, R ^a   Koch, Th ^a   Oshinowo, J ^a   Faller, F ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000596496     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116467     Document Type: Article

References (15)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
2. P. Ils, A. Forchel, and K. H. Wang, Phys. Rev. B 50, 11746 (1994).
3. Y. Nagamune, Y. Arakawa, S. Tsukamoto, M. Nishioka, S. Sasaki, and N. Miura, Phys. Rev. Lett. 69, 2963 (1992).
4. R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, Phys. Rev. Lett. 67, 3812 (1991).
5. W. Wegscheider, L. N. Pfeiffer, M. M. Dignam, A. Pinczuk, K. W. West, S. I. McCall, and R. Hull, Phys. Rev. Lett. 71, 4071 (1993).
6. J. Oshinowo, M. Nishioka, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. 65, 1421 (1994).
7. M. Böttcher, L. Bauch, and I. Stolberg, J. Vac. Sci. Technol. B 12, 3473 (1994).
8. Y. W. Yau, R. F. W. Pease, A. A. Iranmanesh, and K. J. Polasko, J. Vac. Sci. Technol. 19, 1048 (1981).
9. Y.-H. Lee, R. Browning, N. Maluf, G. Owen, and R. F. W. Pease, J. Vac. Sci. Technol. B 10, 3094 (1992).
10. M. A. McCord and T. H. Newman, J. Vac. Sci. Technol. B 10, 3083 (1993).
11. R. Steffen, F. Faller, and A. Forchel, J. Vac. Sci. Technol. B 12, 3653 (1994).
12. J. Dreybrodt, A. Forchel, and J. P. Reithmaier, Phys. Rev. B 48, 14741 (1993).
13. J. M. Moison, C. Guille, M. Van Rompay, F. Barthe, F. Houzay, and M. Bensoussan, Phys. Rev. B 39, 1772 (1989).
14. Landolt-Börnstein, New Series, Vol. 17a: Semiconductors (Springer, Berlin, 1982).
15. S. Le Goff and B. Stebe, Phys. Rev. B 47, 1383 (1993).