Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 583-587

  Bhunia, S ^a   Kawamura, T ^a   Fujikawa, S ^b   Tokushima, K ^b   Watanabe, Y ^a  

^a NTT Basic Research Laboratories   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Electron microscopy; InP; MOVPE; Nanowires; Photoluminescence

Indexed keywords

ANNEALING; BINARY ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; PHASE DIAGRAMS; PHOTOLUMINESCENCE; RESONANT TUNNELING; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

INP; NANOWIRES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 1642265305     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.083     Document Type: Conference Paper

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