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Volumn 108-109, Issue , 2005, Pages 253-260

Electronic properties and thermal stabilty of defects induced by mev electron/ion irradiations in unstrained germanium and SiGe alloys

(7) Markevich, V P a,b Peaker, A R a Murin, L I b Emtsev, V V c Litvinov, V V d Abrosimov, N V e Dobaczewski, L f

a UNIVERSITY OF MANCHESTER (United Kingdom)

b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS (Belarus)

c IOFFE INSTITUTE (Russian Federation)

d BELARUSIAN STATE UNIVERSITY (Belarus)

e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

f INSTITUTE OF PHYSICS (Poland)

Author keywords

Defects; Germanium; Implantation; Irradiation; SiGe alloys

Indexed keywords

BUDGET CONTROL; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRONIC PROPERTIES; GERMANIUM; ION IMPLANTATION; IRRADIATION; SEMICONDUCTOR DEVICE MANUFACTURE;

IMPLANTATION DAMAGE; INTERSTITIAL CLUSTERS; ISOCHRONAL ANNEALING; LOW THERMAL BUDGET; SILICON ION IMPLANTATION; STABILITY OF DEFECTS; UNSTRAINED GERMANIUM; VACANCY-RELATED DEFECTS;

SI-GE ALLOYS;

EID: 33751107308 PISSN: 10120394 EISSN: 16629779 Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.108-109.253 Document Type: Conference Paper

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