Electronic contribution to secondary electron compositional contrast in the scanning electron microscope

Ultramicroscopy

Volumn 69, Issue 4, 1997, Pages 279-287

  Castell, Martin R ^a,c   Perovic, Doug D ^a   Lafontaine, Hugues ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Heterostructure; Scanning electron microscopy; Secondary electron; Strain

Indexed keywords

BAND STRUCTURE; GERMANIUM ALLOYS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; STRAIN;

SECONDARY ELECTRONS;

HETEROJUNCTIONS;

ARTICLE; ELECTRON DIFFRACTION; ELECTRON RADIATION; IMAGE ANALYSIS; RADIATION PHYSICS; SCANNING ELECTRON MICROSCOPY; THICKNESS;

EID: 0342437098     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00051-X     Document Type: Article

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