Effect of hydrogenation on the memory properties of Si nanocrystals obtained by inductively coupled plasma chemical vapor deposition

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Cha, Young Kwan ^a   Park, Sangjin ^a   Park, Youngsoo ^a   Yoo, In Kyeong ^a   Cha, Daigil ^b   Shin, Jung H ^b   Choi, Suk Ho ^a,c  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRY; HOLE CHARGING; HOLE STORAGE;

ANNEALING; CHEMICAL VAPOR DEPOSITION; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; NANOSTRUCTURED MATERIALS; SILICON;

MOS DEVICES;

EID: 33751080097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2388144     Document Type: Article

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