The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 986-990

  Cheylan, S ^a   Elliman, R G ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Ion implantation; Light emission; Nanocrystal; Photoluminescence; Photonics; Silica

Indexed keywords

ION DOSE; PHOTOLUMINESCENCE EMISSION INTENSITY;

ANNEALING; ENERGY TRANSFER; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE;

SILICA;

EID: 0033513676     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00771-X     Document Type: Article

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