-
1
-
-
0033346869
-
An algorithm for row-column self-repair of RAMs and its implementation in the Alpha 21264
-
D. K. Bhavsar, "An algorithm for row-column self-repair of RAMs and its implementation in the Alpha 21264", in Proc. Int. Test Conf. (ITC), 1999, pp. 311-318.
-
(1999)
Proc. Int. Test Conf. (ITC)
, pp. 311-318
-
-
Bhavsar, D.K.1
-
2
-
-
0034476165
-
A built-in self-repair analyzer (CRESTA) for embedded DRAMs
-
T. Kawagoe, J. Ohtani, M. Niiro, T. Ooishi, M. Hamada, and H. Hidaka, 'A built-in self-repair analyzer (CRESTA) for embedded DRAMs", in Proc. Int. Test Conf. (ITC), 2000, pp. 567-574.
-
(2000)
Proc. Int. Test Conf. (ITC)
, pp. 567-574
-
-
Kawagoe, T.1
Ohtani, J.2
Niiro, M.3
Ooishi, T.4
Hamada, M.5
Hidaka, H.6
-
3
-
-
0035680668
-
Test cost reduction by at-speed BISR for embedded DRAMs
-
Baltimore, Oct.
-
Y. Nagura, M. Mullins, A. Sauvageau, Y. Fujiwara, K. Furue, R. Ohmura, T. Komoike, T. Okitaka, T. Tanizaki, K. Dosaka, K. Arimito, Y. Koda, and T. Tada, Test cost reduction by at-speed BISR for embedded DRAMs", in Proc. Int. Test Conf. (ITC), Baltimore, Oct. 2001, pp. 182-187.
-
(2001)
Proc. Int. Test Conf. (ITC)
, pp. 182-187
-
-
Nagura, Y.1
Mullins, M.2
Sauvageau, A.3
Fujiwara, Y.4
Furue, K.5
Ohmura, R.6
Komoike, T.7
Okitaka, T.8
Tanizaki, T.9
Dosaka, K.10
Arimito, K.11
Koda, Y.12
Tada, T.13
-
4
-
-
23744456840
-
A builtin self-repair design for RAMs with 2-D redundancy
-
June
-
J.-R Li, J.-C. Yeh, R.-F. Huang, and C.-W. Wu, "A builtin self-repair design for RAMs with 2-D redundancy", IEEE Trans. VLSI Systems, vol. 13, no. 6, pp. 742-745, June 2005.
-
(2005)
IEEE Trans. VLSI Systems
, vol.13
, Issue.6
, pp. 742-745
-
-
Li, J.-R.1
Yeh, J.-C.2
Huang, R.-F.3
Wu, C.-W.4
-
5
-
-
0742290127
-
Builtin redundancy analysis for memory yield improvement
-
Dec.
-
C.-T. Huang, C.-F. Wu, J.-F. Li, and C.-W. Wu, 'Builtin redundancy analysis for memory yield improvement", IEEE Trans. Reliability, vol. 52, no. 4, pp. 386-399, Dec. 2003.
-
(2003)
IEEE Trans. Reliability
, vol.52
, Issue.4
, pp. 386-399
-
-
Huang, C.-T.1
Wu, C.-F.2
Li, J.-F.3
Wu, C.-W.4
-
6
-
-
33751075352
-
Flash memory built-in self-diagnosis with test mode control
-
Palm Springs, May
-
J.-C. Yeh, Y.-T. Lai, Y.-Y. Shih, and C.-W. Wu, 'Flash memory built-in self-diagnosis with test mode control", in Proc. IEEE VLSI Test Symp. (VTS), Palm Springs, May 2005, pp. 15-20.
-
(2005)
Proc. IEEE VLSI Test Symp. (VTS)
, pp. 15-20
-
-
Yeh, J.-C.1
Lai, Y.-T.2
Shih, Y.-Y.3
Wu, C.-W.4
-
7
-
-
0028015196
-
Rowredundancy scheme for high-density flash memory
-
M. Mihara, T. Nakayama, M. Ohkawa, S. Kawai, Y. Miyawaki, Y. Terada, M. Ohi, H. Onoda, N. Ajika, M. Hatanaka, H. Miyoshi, and T. Yoshihara, 'Rowredundancy scheme for high-density flash memory", in Proc. IEEE Int. Solid-State Cir. Conf. (ISSCC), 1994, pp. 150-151.
-
(1994)
Proc. IEEE Int. Solid-State Cir. Conf. (ISSCC)
, pp. 150-151
-
-
Mihara, M.1
Nakayama, T.2
Ohkawa, M.3
Kawai, S.4
Miyawaki, Y.5
Terada, Y.6
Ohi, M.7
Onoda, H.8
Ajika, N.9
Hatanaka, M.10
Miyoshi, H.11
Yoshihara, T.12
-
8
-
-
0030085950
-
2 64Mb and flash memory with a 0.4μm technology
-
2 64Mb AND flash memory with a 0.4μm technology", in Proc. IEEE Int. Solid-State Cir. Conf. (ISSCC), 1996, pp. 34-35.
-
(1996)
Proc. IEEE Int. Solid-State Cir. Conf. (ISSCC)
, pp. 34-35
-
-
Miwa, H.1
Tanaka, T.2
Oshima, K.3
Nakamura, Y.4
Ishii, T.5
Ohba, A.6
Kouro, Y.7
Furukawa, T.8
Ikeda, Y.9
Tsuchiya, O.10
Hori, R.11
Miyazawa, K.12
-
9
-
-
0034316131
-
2 3-V-only 50-MHz 64-Mb 2b/cell CHE NOR flash memory
-
Nov.
-
2 3-V-only 50-MHz 64-Mb 2b/cell CHE NOR flash memory", IEEE Journal of Solid-State Circuits, vol. 35, no. 11, pp. 1655-1667, Nov. 2000.
-
(2000)
IEEE Journal of Solid-State Circuits
, vol.35
, Issue.11
, pp. 1655-1667
-
-
Campardo, G.1
Micheloni, R.2
Commodardo, S.3
Yero, E.4
Zammattio, M.5
Mognoni, S.6
Sacco, A.7
Picca, M.8
Manstretta, A.9
Scotti, M.10
Motta, I.11
Golla, C.12
Pierin, A.13
Bez, R.14
Grossi, A.15
Modelli, A.16
Visconti, A.17
Khouri, O.18
Torelli, G.19
-
10
-
-
11144235303
-
An overview of logic architecture inside flash memory devices
-
Apr.
-
A. Silvagni, G. Fusillo, R. Ravasio, M. Picca, and S. Zanardi, "An overview of logic architecture inside flash memory devices", Proc. of the IEEE, vol. 91, no. 4, pp. 569-580, Apr. 2003.
-
(2003)
Proc. of the IEEE
, vol.91
, Issue.4
, pp. 569-580
-
-
Silvagni, A.1
Fusillo, G.2
Ravasio, R.3
Picca, M.4
Zanardi, S.5
-
11
-
-
0036858190
-
2 four-bank eight-word page-read 64-Mb flash memory with flsxible block redundancy and fast accurate word-line voltage controller
-
Nov.
-
2 four-bank eight-word page-read 64-Mb flash memory with flsxible block redundancy and fast accurate word-line voltage controller", IEEE Journal, of Solid-State Circuits, vol. 37, no. 11, pp. 1485-1492, Nov. 2002.
-
(2002)
IEEE Journal, of Solid-state Circuits
, vol.37
, Issue.11
, pp. 1485-1492
-
-
Tanzawa, T.1
Umezawa, A.2
Taura, T.3
Shiga, H.4
Hara, T.5
Takano, Y.6
Miyaba, T.7
Tokiwa, N.8
Watanabe, K.9
Watanabe, H.10
Masuda, K.11
Naruke, K.12
Kato, H.13
Atsumi, S.14
-
12
-
-
13244277458
-
On test and diagnostics of flash memories
-
Renting, Taiwan, Nov.
-
C.-T. Huang, J.-C. Yeh, Y.-Y. Shih, R.-F. Huang, and C.W. Wu, 'On test and diagnostics of flash memories", in Proc. 13th IEEE Asian Test Symp. (ATS), Renting, Taiwan, Nov. 2004, pp. 260-265.
-
(2004)
Proc. 13th IEEE Asian Test Symp. (ATS)
, pp. 260-265
-
-
Huang, C.-T.1
Yeh, J.-C.2
Shih, Y.-Y.3
Huang, R.-F.4
Wu, C.W.5
-
13
-
-
0034878377
-
Amethod to calculate redundancy coverage for flash memories
-
San Jose
-
S. Matarress and L. Fasoli, 'Amethod to calculate redundancy coverage for flash memories", in Proc. IEEE Int. Workshop on Memory Technology, Design and Testing (MTDT), San Jose, 2001, pp. 41-44.
-
(2001)
Proc. IEEE Int. Workshop on Memory Technology, Design and Testing (MTDT)
, pp. 41-44
-
-
Matarress, S.1
Fasoli, L.2
|