-
1
-
-
0029253928
-
A multilevel-cell 32-Mb flash memory
-
M. Bauer, R. Alexis, G. Atwood, B. Baltar, A. Fazio, K. Frary, M. Hensel, M. Ishac, J. Javanifard, M. Landgraf, D. Leak, K. Loe, D. Mills, P. Ruby, R. Rozman, S. Sweha, S. Talreja, and K. Wojciechowski, "A multilevel-cell 32-Mb flash memory," in IEEE ISSCC Dig. Tech. Papers, Feb. 1995, pp. 132-133.
-
(1995)
IEEE ISSCC Dig. Tech. Papers, Feb.
, pp. 132-133
-
-
Bauer, M.1
Alexis, R.2
Atwood, G.3
Baltar, B.4
Fazio, A.5
Frary, K.6
Hensel, M.7
Ishac, M.8
Javanifard, J.9
Landgraf, M.10
Leak, D.11
Loe, K.12
Mills, D.13
Ruby, P.14
Rozman, R.15
Sweha, S.16
Talreja, S.17
Wojciechowski, K.18
-
2
-
-
0030291637
-
2 3.3-V-only 128-Mb multilevel NAND flash memory for mass storage applications
-
2 3.3-V-only 128-Mb multilevel NAND flash memory for mass storage applications," IEEE J. Solid-State Circuits, vol. 34, pp. 1575-1583, Nov. 1999.
-
(1999)
IEEE J. Solid-State Circuits
, vol.34
, pp. 1575-1583
-
-
Jung, T.-S.1
Choi, Y.-J.2
Suh, K.-D.3
Suh, B.-H.4
Kirn, J.-K.5
Lim, Y.-H.6
Koh, Y.-N.7
Park, J.-W.8
Lee, K.-J.9
Park, J.-H.10
Park, K.-T.11
Kim, J.-R.12
Yi, J.-H.13
Lim, H.-K.14
-
3
-
-
0030288232
-
2 die size 3.3-V 64-Mb flash memory with FN-NOR-type 4-level cell
-
Nov.
-
2 die size 3.3-V 64-Mb flash memory with FN-NOR-type 4-level cell," IEEE J. Solid-State Circuits, vol. 31, pp. 1584-1589, Nov. 1996.
-
(1996)
IEEE J. Solid-State Circuits
, vol.31
, pp. 1584-1589
-
-
Ohkawa, M.1
Sugawara, H.2
Sudo, N.3
Tsukiji, M.4
Nakagawa, K.5
Kawata, M.6
Oyama, K.7
Takeshima, T.8
Ohya, S.9
-
4
-
-
0032304222
-
Nonvolatile multilevel memories for digital applications
-
Dec.
-
B. Riccó, G. Torelli, M. Lanzoni, A. Manstretta, H. E. Maes, D. Montanari, and A. Modelli, "Nonvolatile multilevel memories for digital applications," Proc. IEEE, vol. 86, pp. 2399-2421, Dec. 1998.
-
(1998)
Proc. IEEE
, vol.86
, pp. 2399-2421
-
-
Riccó, B.1
Torelli, G.2
Lanzoni, M.3
Manstretta, A.4
Maes, H.E.5
Montanari, D.6
Modelli, A.7
-
5
-
-
0033221598
-
A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications
-
Nov.
-
A. Nozoe, H. Kotani, T. Tsujikawa, K. Yoshida, K. Furusawa, M. Kato, T. Nishimoto, H. Kume, H. Kurata, N. Miyamoto, S. Kubono, M. Kanamitsu, K. Koda, T. Nakayama, Y Kouro, A. Hosogane, N. Ajika, and K. Kobayashi, "A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications." IEEE J. Solid-State Circuits, vol. 34, pp. 1544-1550, Nov. 1999.
-
(1999)
IEEE J. Solid-State Circuits
, vol.34
, pp. 1544-1550
-
-
Nozoe, A.1
Kotani, H.2
Tsujikawa, T.3
Yoshida, K.4
Furusawa, K.5
Kato, M.6
Nishimoto, T.7
Kume, H.8
Kurata, H.9
Miyamoto, N.10
Kubono, S.11
Kanamitsu, M.12
Koda, K.13
Nakayama, T.14
Kouro, Y.15
Hosogane, A.16
Ajika, N.17
Kobayashi, K.18
-
6
-
-
0031212918
-
Flash memory cells - An overview
-
Aug.
-
P. Pavan, R. Bez, P. Olivo, and E. Zanoni, "Flash memory cells - An overview," Proc. IEEE, vol. 85, pp. 1248-1271, Aug. 1997.
-
(1997)
Proc. IEEE
, vol.85
, pp. 1248-1271
-
-
Pavan, P.1
Bez, R.2
Olivo, P.3
Zanoni, E.4
-
7
-
-
0030387349
-
Multilevel flash cells and their trade-offs
-
Dec.
-
B. Eitan, R. Kazerounian, A. Roy, G. Crisenza, P. Cappelletti, and A. Modelli, "Multilevel flash cells and their trade-offs," in IEDM 1996 Tech. Dig., Dec. 1996, pp. 169-172.
-
(1996)
IEDM 1996 Tech. Dig.
, pp. 169-172
-
-
Eitan, B.1
Kazerounian, R.2
Roy, A.3
Crisenza, G.4
Cappelletti, P.5
Modelli, A.6
-
8
-
-
0029256354
-
A 3.3-V 50-MHz synchronous 16-Mb flash memory
-
Feb.
-
D. Mills, M. Bauer, A. Bashir, R. Fackenthal, K. Frary, T. Gullard, C. Haid, J. Javanifard, P. Kwong, D. Leak, S. Pudar, M. Rashid, R. Rozman, S. Sambandan, S. Sweha, and J. Tsang, "A 3.3-V 50-MHz synchronous 16-Mb flash memory," IEEE ISSCC Dig. Tech. Papers, pp. 120-121, Feb. 1995.
-
(1995)
IEEE ISSCC Dig. Tech. Papers
, pp. 120-121
-
-
Mills, D.1
Bauer, M.2
Bashir, A.3
Fackenthal, R.4
Frary, K.5
Gullard, T.6
Haid, C.7
Javanifard, J.8
Kwong, P.9
Leak, D.10
Pudar, S.11
Rashid, M.12
Rozman, R.13
Sambandan, S.14
Sweha, S.15
Tsang, J.16
-
9
-
-
0030085298
-
A 3.3-V-only 16-Mb flash memory with row-decoding scheme
-
Feb.
-
S. Atsumi, A. Umezawa, M. Kuriyama, H. Banba, N. Ohtsuka, N. Tomita, Y lyama, T. Miyaba, R. Sudoh, E. Kamiya, M. Tanimoto, Y. Hiura, Y. Araki, E. Sakagami, N. Aral, and S. Mori, "A 3.3-V-only 16-Mb flash memory with row-decoding scheme," in IEEE ISSCC Dig. Tech. Papers, Feb. 1996, pp. 42-43.
-
(1996)
IEEE ISSCC Dig. Tech. Papers
, pp. 42-43
-
-
Atsumi, S.1
Umezawa, A.2
Kuriyama, M.3
Banba, H.4
Ohtsuka, N.5
Tomita, N.6
Lyama, Y.7
Miyaba, T.8
Sudoh, R.9
Kamiya, E.10
Tanimoto, M.11
Hiura, Y.12
Araki, Y.13
Sakagami, E.14
Aral, N.15
Mori, S.16
-
10
-
-
0029701828
-
A 2.7-V-only 8-Mbx 16 NOR flash memory
-
June
-
J. C. Chen, T. H. Kuo, L. E. Cleveland, C. K. Chung, N. Leong, Y. K. Kim, T. Akaogi, and Y Kasa, "A 2.7-V-only 8-Mbx 16 NOR flash memory," in 1996 Symp. VLSI Circuits Dig. Tech. Papers, June 1996, pp. 172-173.
-
(1996)
1996 Symp. VLSI Circuits Dig. Tech. Papers
, pp. 172-173
-
-
Chen, J.C.1
Kuo, T.H.2
Cleveland, L.E.3
Chung, C.K.4
Leong, N.5
Kim, Y.K.6
Akaogi, T.7
Kasa, Y.8
-
11
-
-
0016961262
-
On-chip high-voltage generation in NMOS integrated circuits using an improved voltage multiplier technique
-
June
-
J. Dickson, "On-chip high-voltage generation in NMOS integrated circuits using an improved voltage multiplier technique," IEEE J. Solid-State Circuits, vol. 11, pp. 374-378, June 1976.
-
(1976)
IEEE J. Solid-State Circuits
, vol.11
, pp. 374-378
-
-
Dickson, J.1
-
12
-
-
0001050518
-
MOS charge pumps for low-voltage operation
-
Apr.
-
J.-T. Wu and K.-L. Chang, "MOS charge pumps for low-voltage operation," IEEE J . Solid-State Circuits, vol. 33, pp. 592-597, Apr. 1998.
-
(1998)
IEEE J . Solid-State Circuits
, vol.33
, pp. 592-597
-
-
Wu, J.-T.1
Chang, K.-L.2
-
13
-
-
0022738392
-
A four-state EEPROM using floating-gate memory cells
-
June
-
C. Bleiker and H. Melchior, "A four-state EEPROM using floating-gate memory cells," IEEE J. Solid-State Circuits, vol. 22, pp. 460-463, June 1987.
-
(1987)
IEEE J. Solid-State Circuits
, vol.22
, pp. 460-463
-
-
Bleiker, C.1
Melchior, H.2
-
14
-
-
0030358513
-
Technological and design constraints for multilevel flash memories
-
Oct.
-
C. Calligaro, A. Manstretta, A. Modelli, and G. Torelli, "Technological and design constraints for multilevel flash memories," in Proc. 3rd IEEE Int. Conf. Electronics, Circuits and Systems, Oct. 1996, pp. 1003-1008.
-
(1996)
Proc. 3rd IEEE Int. Conf. Electronics, Circuits and Systems
, pp. 1003-1008
-
-
Calligaro, C.1
Manstretta, A.2
Modelli, A.3
Torelli, G.4
-
15
-
-
0000941771
-
Memory architecture and related issues
-
P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Eds. Norwell, MA: Kluwer, ch. 5
-
M. Branchetti, G. Commodaro, S. Commodaro, S. Ghezzi, A. Ghilardelli, C. Golla, I. Martines, M. Maccarrone, R. Micheloni, M. Zammattio, and S. Zanardi, "Memory architecture and related issues," in Flash Memories, P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Eds. Norwell, MA: Kluwer, 1999, ch. 5.
-
(1999)
Flash Memories
-
-
Branchetti, M.1
Commodaro, G.2
Commodaro, S.3
Ghezzi, S.4
Ghilardelli, A.5
Golla, C.6
Martines, I.7
Maccarrone, M.8
Micheloni, R.9
Zammattio, M.10
Zanardi, S.11
-
16
-
-
0001834707
-
Cascode voltage switch logic: A differential CMOS logic family
-
Feb.
-
L. G. Heller and W. R. Griffin, "Cascode voltage switch logic: A differential CMOS logic family," IEEE ISSCC Dig. Tech. Papers, pp. 16-17, Feb. 1984.
-
(1984)
IEEE ISSCC Dig. Tech. Papers
, pp. 16-17
-
-
Heller, L.G.1
Griffin, W.R.2
-
17
-
-
0024753848
-
Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits
-
Oct.
-
J. S. Witters, G. Groeseneken, and H. E. Macs, "Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits," IEEE J. Solid-State Circuits, vol. 24, pp. 1372-1380, Oct. 1989.
-
(1989)
IEEE J. Solid-State Circuits
, vol.24
, pp. 1372-1380
-
-
Witters, J.S.1
Groeseneken, G.2
Macs, H.E.3
-
18
-
-
0020844527
-
An improved method for programming a worderasable EEPROM
-
Nov./Dec.
-
G. Torelli and P. Lupi, "An improved method for programming a worderasable EEPROM," Alta Frequenza, vol. LII, pp. 487-494, Nov./Dec. 1983.
-
(1983)
Alta Frequenza
, vol.52
, pp. 487-494
-
-
Torelli, G.1
Lupi, P.2
-
19
-
-
0024752312
-
A 90-ns one-million erase/program cycle 1-Mb flash memory
-
Oct.
-
V. N. Kynett, M. L. Fandrich, J. Anderson, P. Dix, O. Jungroth, J. A. Kreifels, R. A. Lodenquai, B. Vajdic, S. Wells, M. D. Winston, and L. Yang, "A 90-ns one-million erase/program cycle 1-Mb flash memory," IEEE J. Solid-State Circuits, vol. 24, pp. 1259-1264, Oct. 1989.
-
(1989)
IEEE J. Solid-State Circuits
, vol.24
, pp. 1259-1264
-
-
Kynett, V.N.1
Fandrich, M.L.2
Anderson, J.3
Dix, P.4
Jungroth, O.5
Kreifels, J.A.6
Lodenquai, R.A.7
Vajdic, B.8
Wells, S.9
Winston, M.D.10
Yang, L.11
-
20
-
-
0028538112
-
A quick intelligent page-programming architecture and a shielding bit line sensing method for 3-V-only Nand flash memory
-
Nov.
-
T. Tanaka, Y Tanaka, H. Nakamura, K. Sakui, H. Oodaira, R. Shirota, K. Ohuchi, F. Masuoka, and H. Hara, "A quick intelligent page-programming architecture and a shielding bit line sensing method for 3-V-only NAND flash memory," IEEE J. Solid-State Circuits, vol. 29, pp. 1366-1373, Nov. 1994.
-
(1994)
IEEE J. Solid-State Circuits
, vol.29
, pp. 1366-1373
-
-
Tanaka, T.1
Tanaka, Y.2
Nakamura, H.3
Sakui, K.4
Oodaira, H.5
Shirota, R.6
Ohuchi, K.7
Masuoka, F.8
Hara, H.9
-
21
-
-
0029480949
-
Fast and accurate programming method for multilevel Nand EEPROMs
-
Jun.
-
G. J. Hemink, T. Tanaka, T. Endoh, S. Aritome, and R. Shirota, "Fast and accurate programming method for multilevel NAND EEPROMs," in Symp. VLSI Technology Dig. Tech. Papers, Jun. 1995, pp. 129-130.
-
(1995)
Symp. VLSI Technology Dig. Tech. Papers
, pp. 129-130
-
-
Hemink, G.J.1
Tanaka, T.2
Endoh, T.3
Aritome, S.4
Shirota, R.5
-
22
-
-
0013347723
-
A new programming method and cell architecture for multilevel Nand flash memories
-
Monterey, CA, Aug. paper 2.7
-
R. Shirota, G. J. Hemink, K. Takeuchi, H. Nakamura, and S. Aritome, "A new programming method and cell architecture for multilevel NAND flash memories," presented at the 14th IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, Aug. 1995, paper 2.7.
-
(1995)
14th IEEE Non-Volatile Semiconductor Memory Workshop
-
-
Shirota, R.1
Hemink, G.J.2
Takeuchi, K.3
Nakamura, H.4
Aritome, S.5
-
23
-
-
0029404872
-
A 3.3-V 32-Mb NAND flash memory with incremental step pulse programming scheme
-
Nov.
-
K.-D. Suh, B.-H. Suh, Y.-H. Lim, J.-K. Kim, Y.-J. Choi, Y.-N. Koh, S.-S. Lee, S.-C. Kwon, B.-S. Choi, J.-S. Yum, J.-H. Choi, J.-R. Kim, and H.-K. Lim, "A 3.3-V 32-Mb NAND flash memory with incremental step pulse programming scheme," IEEE J. Solid-State Circuits, vol. 31, pp. 1149-1156, Nov. 1995.
-
(1995)
IEEE J. Solid-State Circuits
, vol.31
, pp. 1149-1156
-
-
Suh, K.-D.1
Suh, B.-H.2
Lim, Y.-H.3
Kim, J.-K.4
Choi, Y.-J.5
Koh, Y.-N.6
Lee, S.-S.7
Kwon, S.-C.8
Choi, B.-S.9
Yum, J.-S.10
Choi, J.-H.11
Kim, J.-R.12
Lim, H.-K.13
-
24
-
-
0029707030
-
A high-speed programming scheme for multilevel NAND flash memory
-
June
-
Y.-J. Choi, K.-D. Suh, Y.-N. Koh, J.-W. Park. K.-J. Lee, Y.-J. Cho, and B.-H. Suh, "A high-speed programming scheme for multilevel NAND flash memory," Symp. VLSI Circuits Dig. Tech. Papers, pp. 170-171, June 1996.
-
(1996)
Symp. VLSI Circuits Dig. Tech. Papers
, pp. 170-171
-
-
Choi, Y.-J.1
Suh, K.-D.2
Koh, Y.-N.3
Park K-J Lee, J.-W.4
Cho, Y.-J.5
Suh, B.-H.6
-
25
-
-
0025519523
-
An investigation of erase-mode dependent hole trapping in flash EEPROM memory cell
-
Nov.
-
S. Haddad, C. Chang, A. Wang, J. Bustillo, J. Lien, T. Montalvo, and M. Van Buskirk, "An investigation of erase-mode dependent hole trapping in flash EEPROM memory cell," IEEE Electron Device Lett., vol. 11, pp. 514-516, Nov. 1990.
-
(1990)
IEEE Electron Device Lett.
, vol.11
, pp. 514-516
-
-
Haddad, S.1
Chang, C.2
Wang, A.3
Bustillo, J.4
Lien, J.5
Montalvo, T.6
Van Buskirk, M.7
-
26
-
-
0024090079
-
An in-system reprogrammable 32 K × 8 CMOS flash memory
-
Oct.
-
V. N. Kynett, A. Baker, M. L. Fandrich, G. P. Hoekstra, O. Jungroth, J. A. Kreifels, S. Wells, and M. D. Winston, "An in-system reprogrammable 32 K × 8 CMOS flash memory," IEEE J. Solid-State Circuits, vol. 23, pp. 1157-1162, Oct. 1988.
-
(1988)
IEEE J. Solid-State Circuits
, vol.23
, pp. 1157-1162
-
-
Kynett, V.N.1
Baker, A.2
Fandrich, M.L.3
Hoekstra, G.P.4
Jungroth, O.5
Kreifels, J.A.6
Wells, S.7
Winston, M.D.8
-
27
-
-
33749938628
-
Comparison of current flash EEPROM erasing methods: Stability and how to control
-
Dec.
-
K. Yoshikawa, S. Yamada, J. Miyamoto, T. Suzuki, M. Oshikiri, E. Obi, Y. Hiura, K. Yamada, Y. Ohshima, and S. Atsumi, "Comparison of current flash EEPROM erasing methods: Stability and how to control," in IEDM Tech. Dig., Dec. 1992, pp. 595-598.
-
(1992)
IEDM Tech. Dig.
, pp. 595-598
-
-
Yoshikawa, K.1
Yamada, S.2
Miyamoto, J.3
Suzuki, T.4
Oshikiri, M.5
Obi, E.6
Hiura, Y.7
Yamada, K.8
Ohshima, Y.9
Atsumi, S.10
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