A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate world-line voltage controller

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 11, 2002, Pages 1485-1492

  Tanzawa, Toru ^a   Umezawa, Akira ^a   Taura, Tadayuki ^a   Shiga, Hitoshi ^a   Hara, Tokumasa ^a   Takano, Yoshinori ^a   Miyaba, Takeshi ^a   Tokiwa, Naoya ^a   Watanabe, Kentaro ^a   Watanabe, Hiroshi ^a   Masuda, Kazunori ^a   Naruke, Kiyomi ^a   Kato, Hideo ^a   Atsumi, Shigeru ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

0.16 m; 64 Mb; Dual operation; Flash memories; Page read; Redundancy; Voltage controller

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; PERSONAL COMPUTERS; REDUNDANCY;

DUAL OPERATION FUNCTION; EIGHT -WORD PAGE-READ ACCESS CAPABILITY; VOLTAGE CONTROLLER;

FLASH MEMORY;

EID: 0036858190     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.802356     Document Type: Article

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